High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage221101-5en_US
dc.citation.issueNumber22en_US
dc.citation.spage221101-1en_US
dc.citation.volumeNumber111en_US
dc.contributor.authorEmani, N. K.en_US
dc.contributor.authorKhaidarov, E.en_US
dc.contributor.authorPaniagua-Domínguez, R.en_US
dc.contributor.authorFu, Y. H.en_US
dc.contributor.authorValuckas, V.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorKuznetsov, A. I.en_US
dc.date.accessioned2018-04-12T11:06:19Z
dc.date.available2018-04-12T11:06:19Z
dc.date.issued2017en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.en_US
dc.identifier.doi10.1063/1.5007007en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/37217
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.5007007en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectEfficiencyen_US
dc.subjectGallium compoundsen_US
dc.subjectGallium nitrideen_US
dc.subjectGallium phosphideen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectNanophotonicsen_US
dc.subjectNitridesen_US
dc.subjectPhotonic devicesen_US
dc.subjectPolarizationen_US
dc.subjectQuantum computersen_US
dc.subjectQuantum opticsen_US
dc.subjectSilicon compoundsen_US
dc.subjectTitanium compoundsen_US
dc.subjectTitanium dioxideen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectEpitaxial substratesen_US
dc.subjectExperimental realizationsen_US
dc.subjectGallium nitrides (GaN)en_US
dc.subjectPolarization beam splittersen_US
dc.subjectPolarization-insensitiveen_US
dc.subjectRelative efficiencyen_US
dc.subjectResearch communitiesen_US
dc.subjectTransparent materialen_US
dc.subjectQuantum efficiencyen_US
dc.titleHigh-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengthsen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Electrical and Electronics Engineering
Department of Physics