Modulation in InAs quantum dot waveguides

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buir.contributor.authorAydınlı, Atilla
dc.contributor.authorAkca, B. Imranen_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi L.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDagli, N.en_US
dc.coverage.spatialSalt Lake City, Utah United Statesen_US
dc.date.accessioned2016-02-08T11:45:10Z
dc.date.available2016-02-08T11:45:10Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionConference name: Integrated Photonics and Nanophotonics Research and Applications 2007en_US
dc.descriptionDate of Conference: 8–11 July 2007en_US
dc.description.abstractModulation in molecular beam epitaxy grown self-assembled InAs quantum dot waveguides have been studied at 1500 nm as a function of wavelength and voltage. Enhanced electro-optic coefficients compared to bulk GaAs were observed. © 2007 Optical Society of America.en_US
dc.identifier.doi10.1364/IPNRA.2007.IWE4en_US
dc.identifier.issn2162-2701
dc.identifier.urihttp://hdl.handle.net/11693/27122
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttps://doi.org/10.1364/IPNRA.2007.IWE4en_US
dc.source.titleIntegrated Photonics and Nanophotonics Research and Applications / Slow and Fast Lighten_US
dc.subjectIndium arsenideen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectNanophotonicsen_US
dc.subjectPhotonicsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectWaveguidesen_US
dc.subjectElectro optic coefficienten_US
dc.subjectGaAsen_US
dc.subjectInAs quantum dotsen_US
dc.subjectSelf-assembleden_US
dc.subjectModulationen_US
dc.titleModulation in InAs quantum dot waveguidesen_US
dc.typeConference Paperen_US

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Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)