Three-dimensional interaction force and tunneling current spectroscopy of point defects on rutile TiO2(110)

dc.citation.issueNumber7en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorBaykara, M. Z.en_US
dc.contributor.authorMönig, H.en_US
dc.contributor.authorSchwendemann, T. C.en_US
dc.contributor.authorÜnverdi, Ö.en_US
dc.contributor.authorAltman, E. I.en_US
dc.contributor.authorSchwarz, U. D.en_US
dc.date.accessioned2018-04-12T10:47:29Z
dc.date.available2018-04-12T10:47:29Z
dc.date.issued2016en_US
dc.departmentDepartment of Mechanical Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe extent to which point defects affect the local chemical reactivity and electronic properties of an oxide surface was evaluated with picometer resolution in all three spatial dimensions using simultaneous atomic force/scanning tunneling microscopy measurements performed on the (110) face of rutile TiO2. Oxygen atoms were imaged as protrusions in both data channels, corresponding to a rarely observed imaging mode for this prototypical metal oxide surface. Three-dimensional spectroscopy of interaction forces and tunneling currents was performed on individual surface and subsurface defects as a function of tip-sample distance. An interstitial defect assigned to a subsurface hydrogen atom is found to have a distinct effect on the local density of electronic states on the surface, but no detectable influence on the tip-sample interaction force. Meanwhile, spectroscopic data acquired on an oxygen vacancy highlight the role of the probe tip in chemical reactivity measurements.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:47:29Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1063/1.4942100en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/36660
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttps://doi.org/10.1063/1.4942100en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAtomsen_US
dc.subjectDefect densityen_US
dc.subjectElectron tunnelingen_US
dc.subjectElectronic propertiesen_US
dc.subjectMetalsen_US
dc.subjectOxide mineralsen_US
dc.subjectOxygen vacanciesen_US
dc.subjectPoint defectsen_US
dc.subjectTitanium dioxideen_US
dc.subjectInterstitial defectsen_US
dc.subjectLocal density of electronic stateen_US
dc.subjectPicometer resolutionen_US
dc.subjectPrototypical metal oxide surfacesen_US
dc.subjectReactivity measurementsen_US
dc.subjectSubsurface hydrogensen_US
dc.subjectThree-dimensional interactionen_US
dc.subjectTip-sample interactionen_US
dc.subjectSurface defectsen_US
dc.titleThree-dimensional interaction force and tunneling current spectroscopy of point defects on rutile TiO2(110)en_US
dc.typeArticleen_US

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