Energy relaxation probed by weak antilocalization measurements in GaN heterostructures

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buir.contributor.authorBıyıklı, Necmi
dc.citation.issueNumber10en_US
dc.citation.volumeNumber106en_US
dc.contributor.authorCheng H.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorXie J.en_US
dc.contributor.authorKurdak Ç.en_US
dc.contributor.authorMorko̧ H.en_US
dc.date.accessioned2016-02-08T10:00:53Z
dc.date.available2016-02-08T10:00:53Z
dc.date.issued2009en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractEnergy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the Bloch-Grüneisen regime. Weak antilocalization (WAL) and Shubnikov-de Haas measurements were performed on gated Hall bar structures at temperatures down to 0.3 K. We used WAL as a thermometer to measure the electron temperature Te as a function of the dc bias current. We found that the power dissipated per electron, P e, was proportional to Te4 due to piezoelectric acoustic phonon emission by hot electrons. We calculated Pe as a function of Te without any adjustable parameters for both the static and the dynamic screening cases of piezoelectric e-p coupling. In the temperature range of this experiment, the static screening case was expected to be applicable; however, our data was in better agreement with the dynamic screening case. © 2009 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.3253746en_US
dc.identifier.issn218979
dc.identifier.urihttp://hdl.handle.net/11693/22497
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.3253746en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectAcoustic phononsen_US
dc.subjectAdjustable parametersen_US
dc.subjectBar structureen_US
dc.subjectDC-bias currenten_US
dc.subjectDynamic screeningen_US
dc.subjectElectron phononen_US
dc.subjectEnergy relaxationen_US
dc.subjectHeterostructuresen_US
dc.subjectShubnikov-de Haas measurementsen_US
dc.subjectTemperature rangeen_US
dc.subjectWeak antilocalizationen_US
dc.subjectWurtzitesen_US
dc.subjectCrystalsen_US
dc.subjectElectron gasen_US
dc.subjectElectronsen_US
dc.subjectGallium nitrideen_US
dc.subjectHot electronsen_US
dc.subjectPhononsen_US
dc.subjectPiezoelectric transducersen_US
dc.subjectPiezoelectricityen_US
dc.subjectSemiconducting galliumen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectZinc sulfideen_US
dc.subjectElectron temperatureen_US
dc.titleEnergy relaxation probed by weak antilocalization measurements in GaN heterostructuresen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)