Near-UV InGaN/GaN-based dual-operation quantum optoelectronic devices

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.volumeNumber6593en_US
dc.contributor.authorÖzel, Tuncayen_US
dc.contributor.authorSarı, Emraen_US
dc.contributor.authorNizamoğlu, Sedaten_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialMaspalomas, Gran Canaria, Spainen_US
dc.date.accessioned2016-02-08T11:43:48Z
dc.date.available2016-02-08T11:43:48Z
dc.date.issued2007en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 2–4 May 2007en_US
dc.descriptionConference name: Proceedings of SPIE, Photonic Materials, Devices, and Applications IIen_US
dc.description.abstractWe present a novel dual-operation InGaN/GaN based quantum optoelectronic device (QOD) that operates as a quantum electroabsorption modulator in reverse bias and as a light emitter in forward bias in the spectral range of near-ultraviolet (UV). Here we report the design, epitaxial growth, fabrication, and characterization of such QODs that incorporate ∼2-3 nm thick InGaN/GaN quantum structures for operation between 380 nm and 400 nm. In reverse bias, our QODs show an optical absorption coefficient change of ∼14000 cm -1 with a reverse bias of 9 V (corresponding to ∼40 cm -1 absorption coefficient change for 1 V/μm field swing) at 385 nm, reported for the first time for InGaN/GaN quantum structures in the near-UV range. In forward bias, though, our QODs exhibit optical electroluminescence spectrum centered around 383 nm with a full width at half maximum of 20 nm and photoluminescence spectrum centered around 370 nm with a full width at half maximum of 12 nm. This dual operation makes such quantum optoelectronic devices find a wide range of optoelectronics applications both as an electroabsorption modulator and a light emitting diode (LED).en_US
dc.identifier.doi10.1117/12.721992en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/27081
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.721992en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectGaNen_US
dc.subjectInGaN/GaN quantum structuresen_US
dc.subjectLEDsen_US
dc.subjectNear-ultravioleten_US
dc.subjectQuantum electroabsorption modulatorsen_US
dc.subjectEpitaxial growthen_US
dc.subjectLight absorptionen_US
dc.subjectQuantum theoryen_US
dc.subjectSpectrum analysisen_US
dc.subjectUltraviolet radiationen_US
dc.subjectGaN quantum structuresen_US
dc.subjectQuantum electroabsorption modulatoren_US
dc.subjectQuantum electroabsorption modulatorsen_US
dc.subjectLight emitting diodesen_US
dc.titleNear-UV InGaN/GaN-based dual-operation quantum optoelectronic devicesen_US
dc.typeConference Paperen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)