Near-UV InGaN/GaN-based dual-operation quantum optoelectronic devices

Date
2007
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Source Title
Proceedings of SPIE
Print ISSN
0277-786X
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Publisher
SPIE
Volume
6593
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Language
English
Type
Conference Paper
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Abstract

We present a novel dual-operation InGaN/GaN based quantum optoelectronic device (QOD) that operates as a quantum electroabsorption modulator in reverse bias and as a light emitter in forward bias in the spectral range of near-ultraviolet (UV). Here we report the design, epitaxial growth, fabrication, and characterization of such QODs that incorporate ∼2-3 nm thick InGaN/GaN quantum structures for operation between 380 nm and 400 nm. In reverse bias, our QODs show an optical absorption coefficient change of ∼14000 cm -1 with a reverse bias of 9 V (corresponding to ∼40 cm -1 absorption coefficient change for 1 V/μm field swing) at 385 nm, reported for the first time for InGaN/GaN quantum structures in the near-UV range. In forward bias, though, our QODs exhibit optical electroluminescence spectrum centered around 383 nm with a full width at half maximum of 20 nm and photoluminescence spectrum centered around 370 nm with a full width at half maximum of 12 nm. This dual operation makes such quantum optoelectronic devices find a wide range of optoelectronics applications both as an electroabsorption modulator and a light emitting diode (LED).

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Keywords
GaN, InGaN/GaN quantum structures, LEDs, Near-ultraviolet, Quantum electroabsorption modulators, Epitaxial growth, Light absorption, Quantum theory, Spectrum analysis, Ultraviolet radiation, GaN quantum structures, Quantum electroabsorption modulator, Quantum electroabsorption modulators, Light emitting diodes
Citation
Published Version (Please cite this version)