Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors

Date
2011
Advisor
Instructor
Source Title
IEEE Photonic Society 24th Annual Meeting
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
733 - 734
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

Schottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.

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Keywords
Absorption characteristics, Absorption region, Compound semiconductors, Cost advantages, Device capacitance, Enhanced absorption, Grating structures, Low costs, Metal semiconductor interface, Near Infrared, Near infrared region, Optical technique, Plasmonic, Schottky, Schottky detectors, Schottky photodetectors, Seamless integration, Silicon-based, Telecommunication standards, Wavelength ranges, Infrared devices, Light absorption, Photodetectors, Plasmons, VLSI circuits, Semiconducting silicon compounds
Citation
Published Version (Please cite this version)