Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage734en_US
dc.citation.spage733en_US
dc.contributor.authorPolat, Kazım Gürkanen_US
dc.contributor.authorAygun, Levent Erdalen_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialArlington, VA, USAen_US
dc.date.accessioned2016-02-08T12:16:03Z
dc.date.available2016-02-08T12:16:03Z
dc.date.issued2011en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 9-13 Oct. 2011en_US
dc.description.abstractSchottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:16:03Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011en
dc.identifier.doi10.1109/PHO.2011.6110759en_US
dc.identifier.urihttp://hdl.handle.net/11693/28273
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PHO.2011.6110759en_US
dc.source.titleIEEE Photonic Society 24th Annual Meetingen_US
dc.subjectAbsorption characteristicsen_US
dc.subjectAbsorption regionen_US
dc.subjectCompound semiconductorsen_US
dc.subjectCost advantagesen_US
dc.subjectDevice capacitanceen_US
dc.subjectEnhanced absorptionen_US
dc.subjectGrating structuresen_US
dc.subjectLow costsen_US
dc.subjectMetal semiconductor interfaceen_US
dc.subjectNear Infrareden_US
dc.subjectNear infrared regionen_US
dc.subjectOptical techniqueen_US
dc.subjectPlasmonicen_US
dc.subjectSchottkyen_US
dc.subjectSchottky detectorsen_US
dc.subjectSchottky photodetectorsen_US
dc.subjectSeamless integrationen_US
dc.subjectSilicon-baseden_US
dc.subjectTelecommunication standardsen_US
dc.subjectWavelength rangesen_US
dc.subjectInfrared devicesen_US
dc.subjectLight absorptionen_US
dc.subjectPhotodetectorsen_US
dc.subjectPlasmonsen_US
dc.subjectVLSI circuitsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.titlePlasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectorsen_US
dc.typeConference Paperen_US

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