Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage131en_US
dc.citation.spage128en_US
dc.contributor.authorDeminskyi, Petroen_US
dc.contributor.authorHaider, Alien_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorOvsianitsky, A.en_US
dc.contributor.authorTsymbalenko, A.en_US
dc.contributor.authorKotov, D.en_US
dc.contributor.authorMatkivskyi, V.en_US
dc.contributor.authorLiakhova, N.en_US
dc.contributor.authorOsinsky, V.en_US
dc.coverage.spatialKiev, Ukraineen_US
dc.date.accessioned2018-04-12T11:50:00Z
dc.date.available2018-04-12T11:50:00Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 19-21 April 2016en_US
dc.description.abstractThe paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T11:50:00Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1109/ELNANO.2016.7493029en_US
dc.identifier.isbn9781509014316
dc.identifier.urihttp://hdl.handle.net/11693/37747
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ELNANO.2016.7493029en_US
dc.source.title2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)en_US
dc.subjectContaminationen_US
dc.subjectGaNen_US
dc.subjectHCPA ALDen_US
dc.subjectOxygenen_US
dc.subjectThin filmsen_US
dc.subjectAir conditioningen_US
dc.subjectContaminationen_US
dc.subjectGallium nitrideen_US
dc.subjectHydrofluoric aciden_US
dc.subjectNanotechnologyen_US
dc.subjectOxide filmsen_US
dc.subjectOxygenen_US
dc.subjectGaN thin filmsen_US
dc.subjectHCPA ALDen_US
dc.subjectHF treatmenten_US
dc.subjectHigh resolutionen_US
dc.subjectNative oxidesen_US
dc.subjectOxygen contaminationen_US
dc.subjectOxygen impurityen_US
dc.subjectTime durationen_US
dc.subjectThin filmsen_US
dc.titleInvestigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutionsen_US
dc.typeConference Paperen_US

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