Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

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Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions.pdf (861.54 KB)

Date

2016

Authors

Deminskyi, Petro
Haider, Ali
Bıyıklı, Necmi
Ovsianitsky, A.
Tsymbalenko, A.
Kotov, D.
Matkivskyi, V.
Liakhova, N.
Osinsky, V.

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2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)

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IEEE

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Pages

128 - 131

Language

English

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Conference Paper

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Abstract

The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.

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Keywords

Contamination, GaN, HCPA ALD, Oxygen, Thin films, Air conditioning, Contamination, Gallium nitride, Hydrofluoric acid, Nanotechnology, Oxide films, Oxygen, GaN thin films, HCPA ALD, HF treatment, High resolution, Native oxides, Oxygen contamination, Oxygen impurity, Time duration, Thin films

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http://hdl.handle.net/11693/37747

Published Version (Please cite this version)

http://dx.doi.org/10.1109/ELNANO.2016.7493029

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Scholarly Publications - UNAM