21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode

buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage23704en_US
dc.citation.issueNumber24en_US
dc.citation.spage23699en_US
dc.citation.volumeNumber22en_US
dc.contributor.authorÇiçek, O.
dc.contributor.authorArslan, E.
dc.contributor.authorAltındal, Ş.
dc.contributor.authorBadali, Y.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T10:34:18Z
dc.date.available2023-02-28T10:34:18Z
dc.date.issued2022-11-09
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractSensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.en_US
dc.identifier.doi10.1109/JSEN.2022.3219553en_US
dc.identifier.eissn1558-1748
dc.identifier.issn1530-437X
dc.identifier.urihttp://hdl.handle.net/11693/111906
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttps://doi.org/10.1109/JSEN.2022.3219553en_US
dc.source.titleIEEE Sensors Journalen_US
dc.subjectNovel drive modeen_US
dc.subjectSensitivityen_US
dc.subjectTemperature sensingen_US
dc.subjectVertical metal-oxide-semiconductor (MOS) type diodeen_US
dc.title21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive modeen_US
dc.typeArticleen_US
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