21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage23704en_US
dc.citation.issueNumber24en_US
dc.citation.spage23699en_US
dc.citation.volumeNumber22en_US
dc.contributor.authorÇiçek, O.
dc.contributor.authorArslan, E.
dc.contributor.authorAltındal, Ş.
dc.contributor.authorBadali, Y.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T10:34:18Z
dc.date.available2023-02-28T10:34:18Z
dc.date.issued2022-11-09
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractSensitivity ( S ) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni(50 nm) - Au(100 nm) /Ga2O3/ p -Si vertical MOS type diode, using the measured capacitance–voltage ( Cm – V ) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.en_US
dc.description.provenanceSubmitted by Ayça Nur Sezen (ayca.sezen@bilkent.edu.tr) on 2023-02-28T10:34:18Z No. of bitstreams: 1 21.2_mVK_high-performance_Ni(50_nm)-Au(100_nm)Ga2O3p-Si_vertical_MOS_type_diode_and_the_temperature_sensing_characteristics_with_a_novel_drive_mode.pdf: 2788142 bytes, checksum: b022fad1c3149d5e3a7d91d43f986598 (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-28T10:34:18Z (GMT). No. of bitstreams: 1 21.2_mVK_high-performance_Ni(50_nm)-Au(100_nm)Ga2O3p-Si_vertical_MOS_type_diode_and_the_temperature_sensing_characteristics_with_a_novel_drive_mode.pdf: 2788142 bytes, checksum: b022fad1c3149d5e3a7d91d43f986598 (MD5) Previous issue date: 2022-11-09en
dc.identifier.doi10.1109/JSEN.2022.3219553en_US
dc.identifier.eissn1558-1748
dc.identifier.issn1530-437X
dc.identifier.urihttp://hdl.handle.net/11693/111906
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttps://doi.org/10.1109/JSEN.2022.3219553en_US
dc.source.titleIEEE Sensors Journalen_US
dc.subjectNovel drive modeen_US
dc.subjectSensitivityen_US
dc.subjectTemperature sensingen_US
dc.subjectVertical metal-oxide-semiconductor (MOS) type diodeen_US
dc.title21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive modeen_US
dc.typeArticleen_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
21.2_mVK_high-performance_Ni(50_nm)-Au(100_nm)Ga2O3p-Si_vertical_MOS_type_diode_and_the_temperature_sensing_characteristics_with_a_novel_drive_mode.pdf
Size:
2.66 MB
Format:
Adobe Portable Document Format
Description:
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.69 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Nanotechnology Research Center (NANOTAM)