Statistics for 21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode

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21.2 mV/K high-performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si vertical MOS type diode and the temperature sensing characteristics with a novel drive mode 5

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21.2_mVK_high-performance_Ni(50_nm)-Au(100_nm)Ga2O3p-Si_vertical_MOS_type_diode_and_the_temperature_sensing_characteristics_with_a_novel_drive_mode.pdf 32

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