Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
buir.contributor.author | Okyay, Ali Kemal | |
dc.citation.issueNumber | 10 | en_US |
dc.citation.volumeNumber | 3 | en_US |
dc.contributor.author | El-Atab, N. | en_US |
dc.contributor.author | Alqatari, S. | en_US |
dc.contributor.author | Oruc F.B. | en_US |
dc.contributor.author | Souier, T. | en_US |
dc.contributor.author | Chiesa, M. | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.contributor.author | Nayfeh, A. | en_US |
dc.date.accessioned | 2016-02-08T09:35:30Z | |
dc.date.available | 2016-02-08T09:35:30Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s). | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:35:30Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1063/1.4826583 | en_US |
dc.identifier.issn | 2158-3226 | |
dc.identifier.uri | http://hdl.handle.net/11693/20801 | |
dc.language.iso | English | en_US |
dc.publisher | AIP Publishing | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1063/1.4826583 | en_US |
dc.source.title | AIP Advances | en_US |
dc.subject | Conductive AFM | en_US |
dc.subject | Heterojunction diodes | en_US |
dc.subject | Low temperatures | en_US |
dc.subject | On/off ratio | en_US |
dc.subject | P-type silicon | en_US |
dc.subject | Rectification properties | en_US |
dc.subject | Reverse bias | en_US |
dc.subject | Turn-on voltages | en_US |
dc.subject | Atomic force microscopy | en_US |
dc.subject | Diodes | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Semiconductor diodes | en_US |
dc.subject | Zinc oxide | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.title | Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon | en_US |
dc.type | Article | en_US |
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