Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber10en_US
dc.citation.volumeNumber3en_US
dc.contributor.authorEl-Atab, N.en_US
dc.contributor.authorAlqatari, S.en_US
dc.contributor.authorOruc F.B.en_US
dc.contributor.authorSouier, T.en_US
dc.contributor.authorChiesa, M.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.date.accessioned2016-02-08T09:35:30Z
dc.date.available2016-02-08T09:35:30Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractA thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:35:30Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1063/1.4826583en_US
dc.identifier.issn2158-3226
dc.identifier.urihttp://hdl.handle.net/11693/20801
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4826583en_US
dc.source.titleAIP Advancesen_US
dc.subjectConductive AFMen_US
dc.subjectHeterojunction diodesen_US
dc.subjectLow temperaturesen_US
dc.subjectOn/off ratioen_US
dc.subjectP-type siliconen_US
dc.subjectRectification propertiesen_US
dc.subjectReverse biasen_US
dc.subjectTurn-on voltagesen_US
dc.subjectAtomic force microscopyen_US
dc.subjectDiodesen_US
dc.subjectElectric fieldsen_US
dc.subjectHeterojunctionsen_US
dc.subjectSemiconductor diodesen_US
dc.subjectZinc oxideen_US
dc.subjectAtomic layer depositionen_US
dc.titleDiode behavior in ultra-thin low temperature ALD grown zinc-oxide on siliconen_US
dc.typeArticleen_US

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