Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

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Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon.pdf (1.71 MB)

Date

2013

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Source Title

AIP Advances

Print ISSN

2158-3226

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AIP Publishing

Volume

3

Issue

10

Pages

Language

English

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Article

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Abstract

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).

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Keywords

Conductive AFM , Heterojunction diodes , Low temperatures , On/off ratio , P-type silicon , Rectification properties , Reverse bias , Turn-on voltages , Atomic force microscopy , Diodes , Electric fields , Heterojunctions , Semiconductor diodes , Zinc oxide , Atomic layer deposition

Citation

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http://hdl.handle.net/11693/20801

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http://dx.doi.org/10.1063/1.4826583

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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)