Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Date
2013
Advisor
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Source Title
AIP Advances
Print ISSN
2158-3226
Electronic ISSN
Publisher
AIP Publishing
Volume
3
Issue
10
Pages
Language
English
Type
Article
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Volume Title
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Abstract

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).

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Keywords
Conductive AFM, Heterojunction diodes, Low temperatures, On/off ratio, P-type silicon, Rectification properties, Reverse bias, Turn-on voltages, Atomic force microscopy, Diodes, Electric fields, Heterojunctions, Semiconductor diodes, Zinc oxide, Atomic layer deposition
Citation
Published Version (Please cite this version)