Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields

buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage201105-3en_US
dc.citation.issueNumber20en_US
dc.citation.spage201105-1en_US
dc.citation.volumeNumber92en_US
dc.contributor.authorSari, E.en_US
dc.contributor.authorOzel, T.en_US
dc.contributor.authorKoc, A.en_US
dc.contributor.authorJu, J. W.en_US
dc.contributor.authorAhn, H.-K.en_US
dc.contributor.authorLee, I.-H.en_US
dc.contributor.authorBaek, J.-H.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:06:42Z
dc.date.available2015-07-28T12:06:42Z
dc.date.issued2008-05-19en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe present a comparative study on InGaN/GaN quantum zigzag structures embedded in p-i-n diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same InGaN/GaN quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Both computationally and experimentally, we investigate the effects of polarization on electroabsorption by varying compositional content and structural parameters and demonstrate that electroabsorption grows stronger with weaker polarization in these multiple quantum well modulators.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:06:42Z (GMT). No. of bitstreams: 1 10.1063-1.2931696.pdf: 702304 bytes, checksum: 61ae6befc73fbc514b9cb15e7999e7d0 (MD5)en
dc.identifier.doi10.1063/1.2931696en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/13530
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2931696en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleComparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fieldsen_US
dc.typeArticleen_US

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