Comparative study of electroabsorption in InGaN/GaN quantum zigzag heterostructures with polarization-induced electric fields

Date
2008-05-19
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
92
Issue
20
Pages
201105-1 - 201105-3
Language
English
Type
Article
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Abstract

We present a comparative study on InGaN/GaN quantum zigzag structures embedded in p-i-n diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same InGaN/GaN quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Both computationally and experimentally, we investigate the effects of polarization on electroabsorption by varying compositional content and structural parameters and demonstrate that electroabsorption grows stronger with weaker polarization in these multiple quantum well modulators.

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Published Version (Please cite this version)