Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage1136en_US
dc.citation.issueNumber1en_US
dc.citation.spage1128en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorSari, E.en_US
dc.contributor.authorJang, L. W.en_US
dc.contributor.authorBaek, J. H.en_US
dc.contributor.authorLee, I. H.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T11:59:17Z
dc.date.available2015-07-28T11:59:17Z
dc.date.issued2013-01-14en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths. (C) 2013 Optical Society of Americaen_US
dc.identifier.doi10.1364/OE.21.001128en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/11910
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.21.001128en_US
dc.source.titleOptics Expressen_US
dc.subjectLight-emitting-diodesen_US
dc.subjectVapor-phase Epitaxyen_US
dc.subjectGallium-nitrideen_US
dc.subjectOutput Poweren_US
dc.subjectLaser-diodesen_US
dc.subjectGanen_US
dc.subjectBlueen_US
dc.subjectWells,modulatoren_US
dc.subjectFielden_US
dc.titleDislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structuresen_US
dc.typeArticleen_US

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