Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes

Simple item page
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage183524-3en_US
dc.citation.issueNumber18en_US
dc.citation.spage183524-1en_US
dc.citation.volumeNumber89en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorBütün, B.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorÜlker, E.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:17:07Z
dc.date.available2016-02-08T10:17:07Z
dc.date.issued2006en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractThe authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode. © 2006 American Institute of Physics.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:17:07Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2006en
dc.identifier.doi10.1063/1.2385216en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23666
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2385216en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAluminum compoundsen_US
dc.subjectAvalanche diodesen_US
dc.subjectElectronsen_US
dc.subjectIonizationen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectSolar energyen_US
dc.subjectIonization coefficientsen_US
dc.subjectPhotomultiplicationen_US
dc.subjectPhotodiodesen_US
dc.titleExperimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodesen_US
dc.typeArticleen_US

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes.pdf
Size:
265.44 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download

Collections

Scholarly Publications - UNAM
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - Physics