P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

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dc.citation.issueNumber26en_US
dc.citation.volumeNumber103en_US
dc.contributor.authorZhang, Z.-H.en_US
dc.contributor.authorTiam Tan, S.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorWei Sun X.en_US
dc.contributor.authorVolkan Demir H.en_US
dc.date.accessioned2016-02-08T11:03:33Z
dc.date.available2016-02-08T11:03:33Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractHere, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants. © 2013 AIP Publishing LLC.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:03:33Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1063/1.4858386en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/26694
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4858386en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectInGaN/GaNen_US
dc.subjectIngan/gan ledsen_US
dc.subjectInGaN/GaN quantum wellen_US
dc.subjectInjected electronsen_US
dc.subjectMg dopantsen_US
dc.subjectP-dopingen_US
dc.subjectRadiative recombinationen_US
dc.subjectGasesen_US
dc.subjectMetallorganic chemical vapor depositionen_US
dc.subjectLight emitting diodesen_US
dc.titleP-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gasen_US
dc.typeArticleen_US

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Department of Electrical and Electronics Engineering
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