Laser nanofabrication deep inside silicon wafers

buir.contributor.authorSabet, Rana Asgari
buir.contributor.authorIshraq, Aqiq
buir.contributor.authorTokel, Onur
buir.contributor.orcidTokel, Onur|0000-0003-1586-4349
buir.contributor.orcidSabet, Rana Asgari|0000-0001-9926-0221
buir.contributor.orcidIshraq, Aqiq|0000-0001-5905-7931
dc.citation.epage1en_US
dc.citation.spage1en_US
dc.contributor.authorSabet, Rana Asgari
dc.contributor.authorIshraq, Aqiq
dc.contributor.authorTokel, Onur
dc.coverage.spatialMunich, Germanyen_US
dc.date.accessioned2022-01-28T12:04:22Z
dc.date.available2022-01-28T12:04:22Z
dc.date.issued2021-09-30
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionConference Name: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)en_US
dc.descriptionDate of Conference: 21-25 June 2021en_US
dc.description.abstractHere, we introduce the first controlled nanofabrication capability in the bulk of silicon wafers. We exploit smart use of Bessel beams and demonstrate "in-chip" nano-structuring with features lower than 250 nm.en_US
dc.identifier.doi10.1109/CLEO/Europe-EQEC52157.2021.9542673en_US
dc.identifier.eisbn978-1-6654-1876-8
dc.identifier.isbn978-1-6654-4804-8
dc.identifier.urihttp://hdl.handle.net/11693/76878
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/CLEO/Europe-EQEC52157.2021.9542673en_US
dc.source.titleConference on Lasers and Electro-Optics Europe (CLEO EUROPE)en_US
dc.titleLaser nanofabrication deep inside silicon wafersen_US
dc.typeConference Paperen_US

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