Laser nanofabrication deep inside silicon wafers

Date

2021-09-30

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Abstract

Here, we introduce the first controlled nanofabrication capability in the bulk of silicon wafers. We exploit smart use of Bessel beams and demonstrate "in-chip" nano-structuring with features lower than 250 nm.

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Conference on Lasers and Electro-Optics Europe (CLEO EUROPE)

Publisher

IEEE

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Published Version (Please cite this version)

Language

English