Anisotropic electronic, mechanical, and optical properties of monolayer WTe2

dc.citation.epage074307-7en_US
dc.citation.issueNumber7en_US
dc.citation.spage074307-1en_US
dc.citation.volumeNumber119en_US
dc.contributor.authorTorun, E.en_US
dc.contributor.authorSahin, H.en_US
dc.contributor.authorCahangirov, S.en_US
dc.contributor.authorRubio, A.en_US
dc.contributor.authorPeeters, F. M.en_US
dc.date.accessioned2018-04-12T10:47:26Z
dc.date.available2018-04-12T10:47:26Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractUsing first-principles calculations, we investigate the electronic, mechanical, and optical properties of monolayer WTe2. Atomic structure and ground state properties of monolayer WTe2 (Td phase) are anisotropic which are in contrast to similar monolayer crystals of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, WSe2, and MoTe2, which crystallize in the H-phase. We find that the Poisson ratio and the in-plane stiffness is direction dependent due to the symmetry breaking induced by the dimerization of the W atoms along one of the lattice directions of the compound. Since the semimetallic behavior of the Td phase originates from this W-W interaction (along the a crystallographic direction), tensile strain along the dimer direction leads to a semimetal to semiconductor transition after 1% strain. By solving the Bethe-Salpeter equation on top of single shot G0W0 calculations, we predict that the absorption spectrum of Td-WTe2 monolayer is strongly direction dependent and tunable by tensile strain.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:47:26Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1063/1.4942162en_US
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/36659
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttps://doi.org/10.1063/1.4942162en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectAbsorption spectroscopyen_US
dc.subjectAnisotropyen_US
dc.subjectCalculationsen_US
dc.subjectCrystal atomic structureen_US
dc.subjectCrystal structureen_US
dc.subjectGround stateen_US
dc.subjectMonolayersen_US
dc.subjectOptical propertiesen_US
dc.subjectTransition metalsen_US
dc.subjectTungsten compoundsen_US
dc.subjectBethe-Salpeter equationen_US
dc.subjectCrystallographic directionsen_US
dc.subjectFirst-principles calculationen_US
dc.subjectGround state propertiesen_US
dc.subjectIn-plane stiffnessen_US
dc.subjectMonolayer crystalsen_US
dc.subjectSemiconductor transitionen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.subjectTensile strainen_US
dc.titleAnisotropic electronic, mechanical, and optical properties of monolayer WTe2en_US
dc.typeArticleen_US

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