Anisotropic electronic, mechanical, and optical properties of monolayer WTe2
dc.citation.epage | 074307-7 | en_US |
dc.citation.issueNumber | 7 | en_US |
dc.citation.spage | 074307-1 | en_US |
dc.citation.volumeNumber | 119 | en_US |
dc.contributor.author | Torun, E. | en_US |
dc.contributor.author | Sahin, H. | en_US |
dc.contributor.author | Cahangirov, S. | en_US |
dc.contributor.author | Rubio, A. | en_US |
dc.contributor.author | Peeters, F. M. | en_US |
dc.date.accessioned | 2018-04-12T10:47:26Z | |
dc.date.available | 2018-04-12T10:47:26Z | |
dc.date.issued | 2016 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description.abstract | Using first-principles calculations, we investigate the electronic, mechanical, and optical properties of monolayer WTe2. Atomic structure and ground state properties of monolayer WTe2 (Td phase) are anisotropic which are in contrast to similar monolayer crystals of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, WSe2, and MoTe2, which crystallize in the H-phase. We find that the Poisson ratio and the in-plane stiffness is direction dependent due to the symmetry breaking induced by the dimerization of the W atoms along one of the lattice directions of the compound. Since the semimetallic behavior of the Td phase originates from this W-W interaction (along the a crystallographic direction), tensile strain along the dimer direction leads to a semimetal to semiconductor transition after 1% strain. By solving the Bethe-Salpeter equation on top of single shot G0W0 calculations, we predict that the absorption spectrum of Td-WTe2 monolayer is strongly direction dependent and tunable by tensile strain. | en_US |
dc.description.provenance | Made available in DSpace on 2018-04-12T10:47:26Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016 | en |
dc.identifier.doi | 10.1063/1.4942162 | en_US |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/11693/36659 | |
dc.language.iso | English | en_US |
dc.publisher | American Institute of Physics Inc. | en_US |
dc.relation.isversionof | https://doi.org/10.1063/1.4942162 | en_US |
dc.source.title | Journal of Applied Physics | en_US |
dc.subject | Absorption spectroscopy | en_US |
dc.subject | Anisotropy | en_US |
dc.subject | Calculations | en_US |
dc.subject | Crystal atomic structure | en_US |
dc.subject | Crystal structure | en_US |
dc.subject | Ground state | en_US |
dc.subject | Monolayers | en_US |
dc.subject | Optical properties | en_US |
dc.subject | Transition metals | en_US |
dc.subject | Tungsten compounds | en_US |
dc.subject | Bethe-Salpeter equation | en_US |
dc.subject | Crystallographic directions | en_US |
dc.subject | First-principles calculation | en_US |
dc.subject | Ground state properties | en_US |
dc.subject | In-plane stiffness | en_US |
dc.subject | Monolayer crystals | en_US |
dc.subject | Semiconductor transition | en_US |
dc.subject | Transition metal dichalcogenides | en_US |
dc.subject | Tensile strain | en_US |
dc.title | Anisotropic electronic, mechanical, and optical properties of monolayer WTe2 | en_US |
dc.type | Article | en_US |
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