Anisotropic electronic, mechanical, and optical properties of monolayer WTe2

Date

2016

Authors

Torun, E.
Sahin, H.
Cahangirov, S.
Rubio, A.
Peeters, F. M.

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

Source Title

Journal of Applied Physics

Print ISSN

0021-8979

Electronic ISSN

Publisher

American Institute of Physics Inc.

Volume

119

Issue

7

Pages

074307-1 - 074307-7

Language

English

Journal Title

Journal ISSN

Volume Title

Citation Stats
Attention Stats
Usage Stats
2
views
52
downloads

Series

Abstract

Using first-principles calculations, we investigate the electronic, mechanical, and optical properties of monolayer WTe2. Atomic structure and ground state properties of monolayer WTe2 (Td phase) are anisotropic which are in contrast to similar monolayer crystals of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, WSe2, and MoTe2, which crystallize in the H-phase. We find that the Poisson ratio and the in-plane stiffness is direction dependent due to the symmetry breaking induced by the dimerization of the W atoms along one of the lattice directions of the compound. Since the semimetallic behavior of the Td phase originates from this W-W interaction (along the a crystallographic direction), tensile strain along the dimer direction leads to a semimetal to semiconductor transition after 1% strain. By solving the Bethe-Salpeter equation on top of single shot G0W0 calculations, we predict that the absorption spectrum of Td-WTe2 monolayer is strongly direction dependent and tunable by tensile strain.

Course

Other identifiers

Book Title

Degree Discipline

Degree Level

Degree Name

Citation

Published Version (Please cite this version)