On-chip integrated nanowire devices with controllable nanogap for manipulation, capturing, and electrical characterization of nanoparticles
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
dc.citation.epage | 218 | en_US |
dc.citation.spage | 217 | en_US |
dc.contributor.author | Uran, Can | en_US |
dc.contributor.author | Ünal, Emre | en_US |
dc.contributor.author | Kizil, R. | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.coverage.spatial | Belek-Antalya, Turkey | en_US |
dc.date.accessioned | 2016-02-08T12:24:39Z | |
dc.date.available | 2016-02-08T12:24:39Z | |
dc.date.issued | 2009 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.description | Date of Conference: 4-8 Oct. 2009 | en_US |
dc.description.abstract | Dielectrophoresis (DEP) allows for electric field assisted assembly in spatially non-uniform field distribution, where the induced moment is translated into a net force on polarized particles towards the high field gradient. For example, for a spherical particle of radius r with a permittivity constant ofεp in a host medium with the permittivity ofε m, the dielectrophoretic force is given by (1): where r is the particle radius, ω is the angular frequency and Erms is the root mean square electric field. K is the Clausius-Mossotti function, which depends on the complex permittivity of the spherical particle and the medium [1].IEEE. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:24:39Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2009 | en |
dc.identifier.doi | 10.1109/LEOS.2009.5343282 | en_US |
dc.identifier.issn | 1092-8081 | |
dc.identifier.uri | http://hdl.handle.net/11693/28593 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/LEOS.2009.5343282 | en_US |
dc.source.title | 2009 IEEE LEOS Annual Meeting Conference Proceedings | en_US |
dc.subject | Angular frequencies | en_US |
dc.subject | Complex permittivity | en_US |
dc.subject | Dielectrophoresis | en_US |
dc.subject | Dielectrophoretic forces | en_US |
dc.subject | Electrical characterization | en_US |
dc.subject | High field | en_US |
dc.subject | Host mediums | en_US |
dc.subject | Nano-gap | en_US |
dc.subject | Nanowire devices | en_US |
dc.subject | Nonuniform field | en_US |
dc.subject | On chips | en_US |
dc.subject | Permittivity constant | en_US |
dc.subject | Polarized particles | en_US |
dc.subject | Root Mean square | en_US |
dc.subject | Spherical particle | en_US |
dc.subject | Dielectric devices | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Electrophoresis | en_US |
dc.subject | Permittivity | en_US |
dc.title | On-chip integrated nanowire devices with controllable nanogap for manipulation, capturing, and electrical characterization of nanoparticles | en_US |
dc.type | Conference Paper | en_US |
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