Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
buir.contributor.author | Demir, Hilmi Volkan | |
buir.contributor.orcid | Demir, Hilmi Volkan|0000-0003-1793-112X | |
dc.citation.epage | 4969 | en_US |
dc.citation.issueNumber | 4 | en_US |
dc.citation.spage | 4958 | en_US |
dc.citation.volumeNumber | 21 | en_US |
dc.contributor.author | Zhang, Z.-H. | en_US |
dc.contributor.author | Tan, S.T. | en_US |
dc.contributor.author | Liu W. | en_US |
dc.contributor.author | Ju, Z. | en_US |
dc.contributor.author | Zheng, K. | en_US |
dc.contributor.author | Kyaw, Z. | en_US |
dc.contributor.author | Ji, Y. | en_US |
dc.contributor.author | Hasanov, N. | en_US |
dc.contributor.author | Sun X.W. | en_US |
dc.contributor.author | Demir, Hilmi Volkan | en_US |
dc.date.accessioned | 2016-02-08T09:40:29Z | |
dc.date.available | 2016-02-08T09:40:29Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. © 2013 Optical Society of America. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T09:40:29Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1364/OE.21.004958 | en_US |
dc.identifier.issn | 10944087 | |
dc.identifier.uri | http://hdl.handle.net/11693/21065 | |
dc.language.iso | English | en_US |
dc.publisher | Optical Society of American (OSA) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1364/OE.21.004958 | en_US |
dc.source.title | Optics Express | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Built-in electric fields | en_US |
dc.subject | Current spreading | en_US |
dc.subject | Electrical performance | en_US |
dc.subject | External quantum efficiency | en_US |
dc.subject | InGaN/GaN | en_US |
dc.subject | Ingan/gan lightemitting diodes (LEDs) | en_US |
dc.subject | Ionized donors | en_US |
dc.subject | Optical output power | en_US |
dc.subject | Theoretical study | en_US |
dc.subject | Light emitting diodes | en_US |
dc.subject | gallium | en_US |
dc.subject | gallium nitride | en_US |
dc.subject | indium | en_US |
dc.subject | indium nitride | en_US |
dc.subject | gallium | en_US |
dc.subject | indium | en_US |
dc.subject | chemistry | en_US |
dc.subject | device failure analysis | en_US |
dc.subject | devices | en_US |
dc.subject | electric conductivity | en_US |
dc.subject | equipment design | en_US |
dc.subject | illumination | en_US |
dc.subject | semiconductor | en_US |
dc.subject | article | en_US |
dc.subject | chemistry | en_US |
dc.subject | equipment | en_US |
dc.subject | equipment failure | en_US |
dc.subject | illumination | en_US |
dc.subject | Electric Conductivity | en_US |
dc.subject | Equipment Design | en_US |
dc.subject | Equipment Failure Analysis | en_US |
dc.subject | Gallium | en_US |
dc.subject | Indium | en_US |
dc.subject | Lighting | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Electric Conductivity | en_US |
dc.subject | Equipment Design | en_US |
dc.subject | Equipment Failure Analysis | en_US |
dc.subject | Gallium | en_US |
dc.subject | Indium | en_US |
dc.subject | Lighting | en_US |
dc.subject | Semiconductors | en_US |
dc.title | Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer | en_US |
dc.type | Article | en_US |
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