Publication: High-performance solar-blind AlGaN photodetectors
Date
2004
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.
Description
Date of Conference: 11-11 Nov. 2004
Conference name: The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2004. LEOS 2004
Conference name: The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2004. LEOS 2004
Keywords
Bandwidth, Current density, Current voltage characteristics, Electric breakdown, Etching, Light absorption, Ohmic contacts, Photomultipliers, Sapphire, Schottky barrier diodes, Semiconducting aluminum compounds, Thermal noise, Ultraviolet radiation, Engine monitoring, High-speed measurements, Solar-blind (SB) detectors, Underwater communication system, Photodetectors