High-performance solar-blind AlGaN photodetectors
Date
2004
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Abstract
High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.
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Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Publisher
IEEE
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Keywords
Bandwidth, Current density, Current voltage characteristics, Electric breakdown, Etching, Light absorption, Ohmic contacts, Photomultipliers, Sapphire, Schottky barrier diodes, Semiconducting aluminum compounds, Thermal noise, Ultraviolet radiation, Engine monitoring, High-speed measurements, Solar-blind (SB) detectors, Underwater communication system, Photodetectors
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English