High-performance solar-blind AlGaN photodetectors

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage291en_US
dc.citation.spage290en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorTut, Turguten_US
dc.contributor.authorKartaloğlu, Tolgaen_US
dc.contributor.authorAytür, Orhanen_US
dc.coverage.spatialRio Grande, Puerto Rico
dc.date.accessioned2016-02-08T11:53:20Z
dc.date.available2016-02-08T11:53:20Z
dc.date.issued2004en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 11-11 Nov. 2004
dc.descriptionConference name: The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2004. LEOS 2004
dc.description.abstractHigh-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.en_US
dc.identifier.doi10.1109/LEOS.2004.1363225
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/27436
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.2004.1363225
dc.source.titleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOSen_US
dc.subjectBandwidthen_US
dc.subjectCurrent densityen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectric breakdownen_US
dc.subjectEtchingen_US
dc.subjectLight absorptionen_US
dc.subjectOhmic contactsen_US
dc.subjectPhotomultipliersen_US
dc.subjectSapphireen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectThermal noiseen_US
dc.subjectUltraviolet radiationen_US
dc.subjectEngine monitoringen_US
dc.subjectHigh-speed measurementsen_US
dc.subjectSolar-blind (SB) detectorsen_US
dc.subjectUnderwater communication systemen_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-performance solar-blind AlGaN photodetectorsen_US
dc.typeConference Paperen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)