High-performance solar-blind AlGaN photodetectors

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage291
dc.citation.spage290
dc.contributor.authorÖzbay, Ekmel
dc.contributor.authorBıyıklı, Necmi
dc.contributor.authorKimukin, İbrahim
dc.contributor.authorTut, Turgut
dc.contributor.authorKartaloğlu, Tolga
dc.contributor.authorAytür, Orhan
dc.coverage.spatialRio Grande, Puerto Rico
dc.date.accessioned2016-02-08T11:53:20Z
dc.date.available2016-02-08T11:53:20Z
dc.date.issued2004
dc.departmentDepartment of Electrical and Electronics Engineering
dc.departmentDepartment of Physics
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.departmentNanotechnology Research Center (NANOTAM)
dc.descriptionDate of Conference: 11-11 Nov. 2004
dc.descriptionConference name: The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2004. LEOS 2004
dc.description.abstractHigh-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire structures. n+ and p+ ohmic contacts on GaN were formed with non-annealed titanium (Ti)/aluminum (Al) and nickel (Ni)/ gold (Au) alloys. Spectral UV photoresponse measurements confirmed the solar-blind response of the devices.
dc.identifier.doi10.1109/LEOS.2004.1363225
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/27436
dc.language.isoEnglish
dc.publisherIEEE
dc.relation.isversionofhttps://doi.org/10.1109/LEOS.2004.1363225
dc.source.titleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
dc.subjectBandwidth
dc.subjectCurrent density
dc.subjectCurrent voltage characteristics
dc.subjectElectric breakdown
dc.subjectEtching
dc.subjectLight absorption
dc.subjectOhmic contacts
dc.subjectPhotomultipliers
dc.subjectSapphire
dc.subjectSchottky barrier diodes
dc.subjectSemiconducting aluminum compounds
dc.subjectThermal noise
dc.subjectUltraviolet radiation
dc.subjectEngine monitoring
dc.subjectHigh-speed measurements
dc.subjectSolar-blind (SB) detectors
dc.subjectUnderwater communication system
dc.subjectPhotodetectors
dc.titleHigh-performance solar-blind AlGaN photodetectors
dc.typeConference Paper
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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