Browsing by Subject "ZnO"

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Embargo
A machine learning approach for the estimation of photocatalytic activity of ALD ZnO thin films on fabric substrates
(Elsevier, 2024-02-01) Akyıldız, Halil I.; Yiğit, E.; Arat, A. B.; Islam, S.
Research in the field of photocatalytic wastewater treatment is striving to enhance catalyst materials to achieve high-performance systems. A promising approach to this goal has been immobilizing photocatalytic materials on fibrous substrates via atomic layer deposition (ALD). Nevertheless, both the ALD process and the assessment of photocatalytic performance involve a multitude of parameters necessitating thorough investigation. In this study, we employ popular machine-learning algorithms, including Support Vector Regression (SVR) and Artificial Neural Networks (ANN), to predict the photocatalytic activity of ALD-coated textiles. The photocatalytic activity is evaluated through methylene blue and methyl orange degradation tests. Machine learning algorithms are tested and trained using the k-fold cross-validation technique. The findings demonstrate that the ANN and SVR methods utilized in this research can predict catalytic activity with mean absolute percentage errors (MAPE) of 2.35 and 3.25, respectively. This study illuminates that, within the defined range of process parameters, the photocatalytic activity of ALD-coated textiles can be precisely estimated with suitable machine-learning algorithms.
Open Access
Ald grown zno as an alternative material for plasmonic and uncooled infrared imaging applications
(2014) Kesim, Yunus Emre
Plasmonics is touted as a milestone in optoelectronics as this technology can form a bridge between electronics and photonics, enabling the integration of electronics and photonic circuits at the nanoscale. Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic optical losses. Recently, there is an increased effort in the search for alternative plasmonic materials including Si, Ge, III-Nitrides and transparent conductive oxides. The main appeal of these materials, most of them semiconductors, is their lower optical losses, especially in the infrared (IR) regime, compared to noble metals owing to their lower number of free electrons. Other advantages can be listed as low-cost and control on plasma frequency thanks to the tunable electron concentration, i.e. effective doping level. This work focuses on atomic layer deposition (ALD) grown ZnO as a candidate material for plasmonic applications. Optical constants of ZnO are investigated along with figures of merit pertaining to plasmonic waveguides. It is shown that ZnO can alleviate the trade-off between propagation length and mode confinement width owing to tunable dielectric properties. In order to demonstrate plasmonic resonances, a grating structure is simulated using finite-difference-time-domain (FDTD) method and an ultra-wide-band (4-15 µm) infrared absorber is computationally demonstrated. Finally, an all ZnO microbolometer is proposed, where ALD grown ZnO is employed as both the thermistor and the absorber of the microbolometer which is an uncooled infrared imaging unit that relies on the resistance change of the active material (thermistor) as it heats up due to the absorption of incident electromagnetic radiation. The material complexity and process steps of microbolometers could be reduced if the thermistor layer and the absorber layer were consolidated in a single layer. Computational analysis of a basic microbolometer structure using FDTD method is conducted in order to calculate the absorptivity in the long-wave infrared (LWIR) region (8-12 µm). In addition, thermal simulations of the microbolometer structure are conducted using finite element method, and time constant and noise-equivalent-temperature-difference (NETD) values are extracted.
Open Access
Atomic layer deposition of metal oxides on self-assembled peptide nanofiber templates for fabrication of functional nanomaterials
(2016-08) Eren, Hamit
There are mainly two basic approaches in nanostructured materials synthesis. The rst one is the top-down approach and requires material removal from a bulk substrate material by chemical, physical, mechanical or thermal means; acid etching, focused ion milling, and laser ablation are among these top-down synthesis techniques. It is a straightforward { albeit poor in material architecture control { method that has established its niche in today's high-volume CMOS transistor fabrication technology which already produces single-digit nanometerscale device features. On the other hand, bottom-up approach exploits ne-tuned materials assembly. Bottom-up approach is realized via direct self-assembly of target nanostructures or material growth on synthetic or natural nanotemplates. Bottom-up nanostructured materials synthesis o ers considerably wider spectrum of achievable material architectures and structural hierarchies. Synthesis of nanostructured materials on self-assembled soft nanotemplates is of signi cant importance because many biological systems utilize this very similar approach to construct complex biomolecule-templated materials. Peptide amphiphile (PA) molecules with their intrinsic property to self-assemble into nanostructures such as bers, present a versatile tool in inorganic material templating. PAs were used as soft templates in several studies for fabrication of nanoscale inorganic materials. Most of these studies are focused on in-solution material deposition on the surface of a template. Even though this approach allows successful material deposition, precise control over material thickness, uniformity, and high conformality is di cult to achieve in a repeatable manner. In order to circumvent this challenge, in this thesis, atomic layer deposition (ALD) technique was deployed for conformal coating of PA nanonetwork templates. ALD involves low-temperature iterative vapor-phase material deposition in a self-limiting fashion. In each deposition half-cycle, Ti- or Zn- containing volatile metalorganic complexes form a self-limiting uniform monolayer that consequently reacts with water vapor (H2O) as an oxygen precursor in the subsequent process half-cycle. As each half-cycle is separated with purge cycles, no gas-phase reactions occurs and material growth proceeds only with surface chemical ligand-exchange reactions. ALD approach allowed obtaining TiO2 or ZnO nanonetworks with tunable wall thickness and ultimate conformality. Obtained metal oxide-peptide hybrid materials were further treated di erently. In the case of TiO2, organic template was removed upon calcination at 450 C, a temperature at which amorphous titania transforms to anatase form. ZnO-peptide hybrid materials on the other hand, did not undergo any thermal processing, as ZnO already grows in wurtzite crystalline form during ALD process. In principle, nanostructured anatase TiO2 and wurtzite ZnO are wide bandgap semiconductors which can be used as photoanode materials. Nanostructured anodic materials still attract a great interest as the matter at nanoscale regimes can provide considerable enhancement in charge carrier separation, charge carrier transport, and active surface area. Here we demonstrate the fabrication of nanostructured TiO2 and ZnO on self-assembled soft templates. As a proof of principle, we utilized semiconducting TiO2 and ZnO in assembly of dye sensitized solar cells and studied material thickness e ect on device performance parameters such as open circuit voltage (Voc), short circuit current (Jsc), and ll factor. Three sets of nanostructured photoanodes with di erent TiO2 deposition cycles (100, 150, and 200) and ZnO deposition cycles (100, 125 and 150) were fabricated. TiO2 and ZnO nanonetworks in photoanodes form a system of interconnected nanotubes, which can facilitate electron transfer. Moreover, these networks are porous high-surface area materials and they can drastically increase number of sensitizer molecules attached to the semiconductor material surface.
Open Access
Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
(Wiley-VCH Verlag, 2014) Battal, E.; Bolat, S.; Tanrikulu, M. Y.; Okyay, Ali Kemal; Akin, T.
ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Co doping induced structural and optical properties of sol-gel prepared ZnO thin films
(Elsevier BV, 2014-11) Gungor, E.; Gungor, T.; Caliskan, D.; Ceylan, A.; Özbay, Ekmel
The preparation conditions for Co doping process into the ZnO structure were studied by the ultrasonic spray pyrolysis technique. Structural and optical properties of the Co:ZnO thin films as a function of Co concentrations were examined. It was observed that hexagonal wurtzite structure of ZnO is dominant up to the critical value, and after the value, the cubic structural phase of the cobalt oxide appears in the X-ray diffraction patterns. Every band-edge of Co:ZnO films shifts to the lower energies and all are confirmed with the PL measurements. Co substitution in ZnO lattice has been proved by the optical transmittance measurement which is observed as the loss of transmission appearing in specific region due to Co2+ characteristic transitions. © 2014 Elsevier B.V. All rights reserved.
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Comparative study of optically activated nanocomposites with photocatalytic TiO2 and ZnO nanoparticles for massive environmental decontamination
(S P I E - International Society for Optical Engineering, 2007) Tek, S.; Mutlugun, E.; Soganci, I. M.; Perkgoz, N. K.; Yucel, D.; Celiker, G.; Demir, Hilmi Volkan
Nanocomposites that incorporate TiO2 and ZnO nanoparticles separately in three-dimensional solgel matrices through full chemical integration are prepared to perform highly efficient photocatalytic activities for applications of environmental decontamination. Spectral responses of photocatalytic TiO2 and ZnO nanoparticles exposed to UV activation for self-cleaning process were obtained as also their optical relative spectral efficiency curves from 270 to 370 nm in the UV regime. Our investigations of the optimal conditions to increase their spectral photocatalytic efficiencies resulted in remarkably high levels of optical recovery and efficiency.
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Electrical properties and device applications of atomic layer deposited ZnO and GaN thin films
(2014) Bolat, Sami
Zinc oxide (ZnO), a semiconducting material with a wide band gap of 3.37 eV, has become a promising material for wide range of electronic and optoelectronic applications. One of the most important properties of this material is its large exciton binding energy of 60 meV, which makes ZnO a strong candidate for ultraviolet light emitting diodes and lasers. In addition, potentially high electron mobility and the transparency in the visible region strengthen the future of the ZnO based transparent electronics. Although several applications of ZnO have taken their places in the literature, use of ZnO in the thermal imaging applications is yet to be explored. In the parts of this thesis related to ZnO, the temperature coefficient of resistance and electrical noise together with resistivity and contact resistance properties of atomic layer deposition based ZnO are investigated. Due to its remarkably high temperature coefficient of resistance value and suitable 1/f noise corner frequency, this material is proposed as an alternative material to be used in the active layers of uncooled microbolometers. GaN is another wide gap semiconductor which has been intensely investigated throughout the last decades for its potential usage in both optical and electrical applications. Especially, high saturation velocity of the electric carriers of this material has made it a strong candidate to be used in high power applications. Furthermore the high electron mobility transistors based on the 2-dimensional electron gas region formed between the AlGaN and GaN, have found wide range of applications in radio frequency (RF) electronics area. Currently, most commonly used techniques for growing GaN, are metal organic chemical vapor deposition and molecular beam epitaxy. Both of these techniques offer single crystalline layers; however, the process temperatures used in the growth of the GaN disable the use of this material in low temperature flexible electronic/optoelectronic applications. In order to solve this problem, hollow cathode plasma assisted atomic layer deposition technique is utilized and GaN thin films with polycrystalline structures are successfully grown at 200°C. In the parts of this thesis related to GaN, the electrical properties, the effect of contact annealing on the resistivity of the GaN thin films and the contact resistance between this material and Ti/Au metallization scheme are investigated. Afterwards, we present the world’s first thin film transistor with atomic layer deposition based GaN channel and discuss its electrical characteristics in detail. Finally, the GaN thin film transistors are fabricated by performing all fabrication steps at temperatures below 250°C. This is the lowest process thermal budget for the GaN based thin film transistors reported so far. Electrical characteristics as well as the stability of the proposed device are investigated and the results obtained are discussed. Proposed devices are believed to pave the way for the GaN-based stable flexible/transparent electronics after further materials and process optimization.
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Enhanced photocatalytic activity of homoassembled ZnO nanostructures on electrospun polymeric nanofibers: a combination of atomic layer deposition and hydrothermal growth
(Elsevier, 2014) Kayaci, F.; Vempati S.; Ozgit Akgun, C.; Bıyıklı, Necmi; Uyar, Tamer
We report on the synthesis and photocatalytic activity (PCA) of electrospun poly(acrylonitrile) (PAN) nanofibrous mat decorated with nanoneedles of zinc oxide (ZnO). Apart from a detailed morphological and structural characterization, the PCA has been carefully monitored and the results are discussed elaborately when juxtaposed with the photoluminescence. The present hierarchal homoassembled nanostructures are a combination of two types of ZnO with diverse optical qualities, i.e. (a) controlled deposition of ZnO coating on nanofibers with dominant oxygen vacancies and significant grain boundaries by atomic layer deposition (ALD), and (b) growth of single crystalline ZnO nanoneedles with high optical quality on the ALD seeds via hydrothermal process. The needle structure (~25. nm in diameter with an aspect ratio of ~24) also supports the vectorial transport of photo-charge carriers, which is crucial for high catalytic activity. Furthermore, it is shown that enhanced PCA is because of the catalytic activity at surface defects (on ALD seed), valence band, and conduction band (of ZnO nanoneedles). PCA and durability of the PAN/ZnO nanofibrous mat have also been tested with aqueous solution of methylene blue and the results showed almost no decay in the catalytic activity of this material when reused.
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Experimental and computational investigation of zinc oxide based surface acoustic wave devices
(2014) Özgöztaşı, Elif
Piezoelectric materials are used in different types of transducers such as microphones, accelerometers, speakers, hydrophones, pressure sensors etc. Compared to traditional bulk piezoelectric crystals, thin film piezoelectric materials are promising to realize integrated devices with CMOS technology. Among thin film materials, zinc oxide (ZnO) is attractive due to the giant piezoelectric effect when doped with vanadium. In this study, we investigate the deposition of thin film ZnO and V-doped ZnO films. Materials characterization of ZnO thin films is performed. We also investigate surface acoustic wave (SAW) devices based on ZnO thin films. SAW devices are formed by a pair of interdigitated transducers (IDTs), input and output IDTs. IDTs are fabricated onto the piezoelectric thin film. Applied oscillating electric field from input IDT creates surface acoustic waves in the piezoelectric thin film and these acoustic waves are converted back into an electrical signal at the output IDT. SAW devices based on ZnO and V-doped ZnO films were designed and fabricated. Frequency response of SAW devices is measured. In addition, finite element simulations of SAW devices are shown to be in agreement with measurement results. We discuss resonance frequency and insertion loss of SAW devices.
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Fast and quick degradation properties of doped and capped ZnO nanoparticles under UV-Visible light radiations
(Elsevier Ltd, 2016) Mittal, M.; Sharma, M.; Pandey, O. P.
Undoped and Manganese (Mn) doped zinc oxide (ZnO) (Zn1- xMnxO, x=0.005, 0.01, 0.015 and 0.02) nanoparticles (NPs) capped with (1.0%) Thioglycerol (TG) has been successfully synthesized by co-precipitation method. Optical and morphological studies have been done for photophysical and structural analysis of synthesized materials. The photocatalytic activity of undoped and Mn doped ZnO NPs were investigated by degradation of crystal violet (CV) dye under UV-Visible light radiations. It has been found that Mn (1.0%) doping concentration is optimal for photophysical and photocatalytic properties. When the pH of as synthesized optimum doped ZnO NPs varied from natural pH i.e. from 6.7 to 8.0 and 10.0, the degradation of CV dye increases from 92% to 95% and 98% in 180min respectively. Further on increasing the pH of optimum doped synthesized NPs to 12.0, almost 100% degradation has been achieved in 150min. Optimum doped photocatalyst synthesized at pH-12.0 has also effectively degraded the CV dye solution in acidic and basic medium thus showed its utility in various industries. However, it has been found that 100% of CV dye quickly degraded in 30min when only 1.0% of hydrogen peroxide (H2O2) was introduced along with optimized NPs synthesized at pH-12. Kinetic studies show that the degradation of CV dye follows pseudo first and second-order kinetic law. Further an industrial anionic polyazo Sirius red F3B (SRF3B) dye has been degraded to 100% with optimized NPs synthesized at pH-12.0 in 15min only.
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Flexible organic-inorganic core-shell nanofibers by electrospinning and atomic layer deposition
(CRC Press, 2012) Kayacı, Fatma; Çağla, Özgit-Akgün; Dönmez, İnci; Bıyıklı, Necmi; Uyar, Tamer
Organic-inorganic core-shell nanofibers were fabricated by combining electrospinning and atomic layer deposition (ALD). In the first step, nylon66 (polymeric organic core) nanofibers having different average fiber diameters (∼100 nm, ∼250 nm and ∼650 nm) were electrospun by using different solvent systems and polymer concentrations. In the second step, uniform and conformal layer of zinc oxide (ZnO) (inorganic shell) with precise thickness (∼90 nm) and composition on the round surface of the nylon nanofibers were deposited by ALD. The core-shell nylon66-ZnO nanofibers have shown unique properties such as structural flexibility due to the polymeric core and photocatalytic activity due to the ZnO shell layer.
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An indium-free transparent resistive switching random access memory
(IEEE, 2011-02-28) Zheng, K.; Sun, X. W.; Zhao, J. L.; Wang, Y.; Yu, H. Y.; Demir, Hilmi Volkan; Teo, K. L.
We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.
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Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes
(IEEE, 2014) Yang, X.; Dev, K.; Wang, J.; Mutlugün, E.; Dang, C.; Zhao, Y.; Tan, S. T.; Sun, X. W.; Demir, Hilmi Volkan
We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs with a similar device structure.
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Manipulating optical properties of ZnO/Ga: ZnO core-shell nanorods via spatially tailoring electronic bandgap
(Wiley-VCH Verlag, 2015) Zhao, X.; Gao, Y.; Wang Y.; Demir, Hilmi Volkan; Wang, S.; Sun, H.
Enhancing optical and electrical properties of ZnO nanostructures via surface doping is demonstrated by Ga:ZnO–ZnO core–shell nanorods, which are grown by a genetic two-step method. Low-temperature photoluminescence and X-ray photoelectron spectroscopy prove the n + shell significantly suppresses the surface-related recombination by spatially modulating the electronic band structure. The study provides a significant physical insight in designing optoelectronic devices.
Embargo
Membrane based electrospun poly cyclodextrin nanofibers coated with ZnO nanograins by ALD Ultrafiltration blended photocatalysis for degradation of organic micropollutants
(Elsevier, 2023-11-15) Ranjith, Kugalur Shanmugam; Yıldız, Zehra İrem; Khalily, Mohammad Aref; Huh, Y. S.; Han, Y.; Uyar, Tamer
Membranes with simultaneous selective adsorption functionality and excellent photocatalytic response have been proposed for water remediation, especially for treating textile and industrial wastewater. However, state-of-the-art membranes are easily fouled by pollutant adsorption that impacts their reusability. Here we report the development of a crosslinked electrospun poly-cyclodextrin (Poly-CD) nanofiber (NF) membrane coated by atomic layer deposition (ALD) with ZnO nanograins for the removal of pollutants from wastewater. The inherent high affinity of poly-CD NFs favored the selective adsorption of cationic impurities, and the reactive oxygen species produced by photoirradiation of the ZnO surface effectively degraded adsorbed contaminants. The NFMs has signifies that, even under the dark, they have a removal efficiency of around 80% which may be due to the high adsorption nature. Further, these NFM are highly reusable while decorating the ZnO nanograins on the NFM, which degraded the adsorbed pollutant and opened up the active site to further adsorb the dye molecule on the poly-CD surface. Under the static mode, the ZnO(100)@poly-CD NFM achieved the highest MB removal efficiency of 94.3%, followed by ZnO(25)@poly-CD, ZnO(200)@poly-CD, and poly-CD, which had removal rates of 91.3%, 87.7%, and 83.1%, respectively in 120 min of photoirradiation. Modulating the photocatalytic reaction in a flow channel, ZnO(100)@poly-CD nanofibrous membranes (NFMs) achieved 2.19-fold higher removal efficiencies (98.6% in 60 min) in a flow-through filtration system than under static conditions (a non-filtration method). Furthermore, the flow-through mode promoted the mass transfer of pollutants through NFMs, which increased reactive oxygen species production by inhibiting electron-hole recombination. Furthermore, the inherent self-cleaning function conferred by the photocatalytic activity of surface ZnO increased membrane structural stability and provided a faster removal rate.
Open Access
Nanofibrous nanocomposites via electrospinning
(2011) Deniz, Ali Ekrem
In recent years, numerous studies have been reported for fabrication of composite nanofibers from polymeric and inorganic materials by using electrospinning method. In the first part of this study, TiO2 and ZnO inorganic nanofibers were produced by electrospinning from their precursors by using polymeric carrier matrix and their photocatalytic activity of these metal oxide nanofibers were studied. Moreover, electrospun TiO2 nanofibers were crushed into short nanofibers (TiO2-SNF) and embedded in electrospun polymeric nanofiber matrixes such as poly(methyl methacrylate) (PMMA), polyacrylonitrile (PAN), polyethylene terephthalate (PET), polycarbonate (PC) and polyvinylidene fluoride (PVDF). Different weight loading of TiO2-SNF ranging from 2% to 8% (w/w, respect to polymer) incorporated into PVDF nanofibrous matrix was applied and the structural and morphological changes along with their photocatalytic activities were also examined. In the second part, metallic nanoparticles produced by laser ablation method were incorporated into nanofibrous polymeric matrix by using electrospinning technique. For example, gold (Au) and silver (Ag) nanoparticles (NPs) were produced from their metallic sources by laser ablation method directly in the polymer solutions. The NPs/polymer mixtures were electrospun and surface plasmon resonance effect of Au-NPs and Ag-NPs on optical properties of the nanofibers was studied. In addition, germanium nanocrystals produced by means of laser ablation were mixed with PVDF polymer solution and consequently electrospun into composite polymeric nanofiber matrix.
Open Access
Novel materials for thin-film memory cells
(2014) Çimen, Furkan
The tremendous growth in consumer electronics market increased the need for low-cost, low-power and high quality memory chips. This challenge is further aggravated by the continuous increase in density and scaling of the gate length, since it creates a major challenge for current nonvolatile flash memory devices to maintain reliability and retention. Therefore, it is imperative to find new materials and novel fabrication processes to be incorporated in memory cells in order to keep up with the enormous rate of increase in consumer needs. In the first part of this thesis, we demonstrate a charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO. We first introduce the fabrication process for the memory device and then investigate the memory characteristics. Our experimental analysis on the memory cell shows a large threshold voltage Vt shift (4V ) at low operating voltages (6/ − 6V ), good retention (> 10 years), and good endurance characteristics (> 104 cycles). The resulting memory behavior is also verified by theoretical computations. In the second part, we demonstrate the use of laser-synthesized indium-nitride nanoparticles (InN-NPs) as the charge trapping layer in the memory cell. We first introduce the indium-nitride nanoparticle synthesis and then detail the fabrication process of the memory device. The experimental analysis of the memory cell results in a noticeable threshold voltage Vt shift (2V ) at low operating voltages (4V ) in addition to the similar retention and endurance performance with the graphene-based memory cells. The memory behavior was also verified with theoretical computations for the InN-NPs based memory cells. In the last part of this thesis, we demonstrate a memory device with a gate stack fabricated in a single ALD step. Single-step all-ALD approach avoids the risk of contamination and incorporation of impurities in the gate stack. It also allows low-cost production by eliminating multiple equipment utilization. Motivated by these, we first present the fabrication process of the memory device and then explain the experimental and theoretical characterization and analysis. The memory effect of the thin-film ZnO charge-trapping memory cell is verified by a 2.35V hysteresis in drain current vs. gate voltage curve. The resulting memory behavior is also verified by physics-based TCAD simulations.
Open Access
Photocatalytic nanocomposites for increased optical activity
(2008) Tek, Sümeyra
To combat environmental pollution, photocatalytic decomposition provides degradation of organic and inorganic contaminants near the surface of the photocatalyst nanoparticles by converting optical energy of the absorbed light into chemical energy for the redox reactions. However, photocatalytic activities of such semiconductor metal-oxide nanoparticles are limited with their bandgap energy that allows for optical absorption typically in the ultraviolet spectral range. Yet another limitation is that the photocatalytic activity of these semiconductor nanoparticles is substantially reduced when they are immobilized in solid thin films, resulting from their effectively decreased active surface area. But such immobilized nanoparticles are much more desired in industrial applications, e.g., for mass environmental decontamination and outdoors/indoors self-cleaning on large surfaces. To address these issues, in this thesis, we investigated and demonstrated the spectral behavior and time evolution of optical activity curves of immobilized TiO2 and ZnO nanoparticles. We studied the nanoparticle size effect for the optical activity and demonstrated significant increase in the resulting photocatalysis with decreasing the size of such immobilized nanoparticles for the first time. We obtained optimal excitation conditions for TiO2 and ZnO nanocomposite films separately. We achieved maximum optical recovery levels of 93% for TiO2 nanoparticles and 55% for ZnO nanoparticles at the excitation wavelengths of 310 nm and 290 nm, respectively, after optical irradiation with an excitation density of 7.3 J/cm2 , where we observed no optical recovery for their respective negative control groups (with no nanoparticles). In these comparative spectral studies, we showed strong correlation between the differential optical recovery and the photocatalytic activity. For further substantial enhancement in the near ultraviolet and visible spectral ranges, we also proposed and demonstrated the use of a unique combination of TiO2-ZnO nanoparticles integrated together into the same resin. In this novel approach, we observed higher levels of photocatalytic activity under optical irradiation at and above 380 nm compared to the cases of only TiO2 or only ZnO nanocomposite films with the same total metal-oxide nanoparticle density. At 400 nm in the visible, we accomplished an optical recovery level of ~30% with the combination of TiO2-ZnO nanoparticles together while this level was only ~14% for the TiO2 nanoparticles alone and ~3% for the ZnO nanoparticles alone under identical conditions. Even at 440 nm, we obtained ~20% optical recovery using the TiO2-ZnO photocatalytic synergy, despite the optical activity of the single type of nanoparticles alone close to the zero base-line of their control group. These proof-of-concept experimental demonstrations indicate that such TiO2-ZnO combined nanocomposite films hold great promise for efficient environmental decontamination in daylight.
Open Access
Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control
(IEEE, 2013) Özcan, Ayşe; Battal, Enes; Atar, Fatih Bilge; Okyay, Ali Kemal
We fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds below the band-gap of ZnO. © 2013 IEEE.
Open Access
Resistive switching mechanism and device applications of ZnO and Ain thin films
(2014) Özcan, Ayşe
Resistive switching memories are potential candidates for next generation nonvolatile memory device applications due to natural simplicity in structure, fast switching speed, long retention time, low power consumption, suitability for 3D integration, excellent scalability and CMOS compatibility. However, the atomic scale mechanisms behind resistive switching are still being debated. In this work we investigate resistive switching mechanisms in ZnO and AlN thin films. The structural and physical changes in ZnO thin films during resistive switching are investigated via TEM, EDX, EFTEM techniques. We also investigate application of resisitive switching to reconfigurable optical surfaces. Recently, resistive switching in nitride films such as AlN is attracting increasing attention. The wide band gap, high electrical resistivity, and high thermal conductivity of AlN make it a good candidate for a resistive switching memory device. We report self-compliant resistive switching behavior in AlN films which is deposited by atomic layer deposition.