An indium-free transparent resistive switching random access memory

Date
2011-02-28
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Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Electronic ISSN
Publisher
IEEE
Volume
32
Issue
6
Pages
797 - 799
Language
English
Type
Article
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Abstract

We report an indium-free transparent resistive switching random access memory device based on GZO-Ga(2)O(3)-ZnO-Ga(2)O(3)-GZO structure by metal-organic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory.

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Keywords
Gzo, Indium free, Transparent resistive switching, ZnO
Citation
Published Version (Please cite this version)