Browsing by Subject "Zinc sulfide"

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Open Access
Broadband optical transparency in plasmonic nanocomposite polymer films via exciton-plasmon energy transfer
(OSA - The Optical Society, 2016) Dhama R.; Rashed, A. R.; Caligiuri V.; El Kabbash M.; Strangi, G.; De Luca A.
Inherent absorptive losses affect the performance of all plasmonic devices, limiting their fascinating applications in the visible range. Here, we report on the enhanced optical transparency obtained as a result of the broadband mitigation of optical losses in nanocomposite polymeric films, embedding core-shell quantum dots (CdSe@ZnS QDs) and gold nanoparticles (Au-NPs). Exciton-plasmon coupling enables non-radiative energy transfer processes from QDs to metal NPs, resulting in gain induced transparency of the hybrid flexible systems. Experimental evidences, such as fluorescence quenching and modifications of fluorescence lifetimes confirm the presence of this strong coupling between plexcitonic elements. Measures performed by means of an ultra-fast broadband pump-probe setup demonstrate loss compensation of gold NPs dispersed in plastic network in presence of gain. Furthermore, we compare two films containing different concentrations of gold NPs and same amount of QDs, to investigate the role of acceptor concentration (Au-NPs) in order to promote an effective and efficient energy transfer mechanism. Gain induced transparency in bulk systems represents a promising path towards the realization of loss compensated plasmonic devices. © 2016 Optical Society of America.
Open Access
Carrier-induced refractive index change in InN
(Wiley, 2008) Bulutay, Ceyhun; Zakhleniuk, N. A.
Rapid development of InN technology demands comprehensive assessment of the electronic and optoelectronic potential of this material. In this theoretical work the effect of free electrons on the optical properties of the wurtzite phase of InN is investigated. The blue shift of the optical absorption edge by the free-carrier band filling is known as the Burstein-Moss effect for which InN offers to be a very suitable candidate as has been recently demonstrated experimentally. Due to well known Kramers-Kronig relations, a change in absorption is accompanied by a change in the index of refraction. Considering n-type InN samples with free electron concentrations ranging from 5x10 17 to 5x1020 cm-3, and employing a nonlocal empirical pseudopotential band structure, it is shown that this leads to a few percent change of the index of refraction. These carrier-induced refractive index changes can be utilized in optical switches, futhermore it needs to be taken into account in the design of InN-based optical devices such as lasers and optical modulators.
Open Access
Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
(A I P Publishing LLC, 2015) Altuntas, H.; Ozgit Akgun, C.; Donmez, I.; Bıyıklı, Necmi
Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200°C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2-21.5 MV/m), Schottky emission (23.6-39.5 MV/m), Frenkel-Poole emission (63.8-211.8 MV/m), trap-assisted tunneling (226-280 MV/m), and Fowler-Nordheim tunneling (290-447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.
Open Access
Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
(Institute of Physics Publishing, 2016) Altuntas, H.; Bayrak, T.; Kizir, S.; Haider, A.; Bıyıklı, Necmi
In this study, aluminum nitride (AlN) thin films were deposited at 200 ï¿½C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ∼5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.
Open Access
Energy relaxation probed by weak antilocalization measurements in GaN heterostructures
(2009) Cheng H.; Bıyıklı, Necmi; Xie J.; Kurdak Ç.; Morko̧ H.
Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the Bloch-Grüneisen regime. Weak antilocalization (WAL) and Shubnikov-de Haas measurements were performed on gated Hall bar structures at temperatures down to 0.3 K. We used WAL as a thermometer to measure the electron temperature Te as a function of the dc bias current. We found that the power dissipated per electron, P e, was proportional to Te4 due to piezoelectric acoustic phonon emission by hot electrons. We calculated Pe as a function of Te without any adjustable parameters for both the static and the dynamic screening cases of piezoelectric e-p coupling. In the temperature range of this experiment, the static screening case was expected to be applicable; however, our data was in better agreement with the dynamic screening case. © 2009 American Institute of Physics.
Open Access
Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015) Ozgit Akgun, C.; Kayaci, F.; Vempati S.; Haider A.; Celebioglu A.; Goldenberg, E.; Kizir S.; Uyar, Tamer; Bıyıklı, Necmi
Here we demonstrate the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) processes by fabricating flexible polymer-GaN organic-inorganic core-shell nanofibers at a processing temperature much lower than that needed for the preparation of conventional GaN ceramic nanofibers. Polymer-GaN organic-inorganic core-shell nanofibers fabricated by the HCPA-ALD of GaN on electrospun polymeric (nylon 6,6) nanofibers at 200 °C were characterized in detail using electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence measurements, and dynamic mechanical analysis. Although transmission electron microscopy studies indicated that the process parameters should be further optimized for obtaining ultimate uniformity and conformality on these high surface area 3D substrates, the HCPA-ALD process resulted in a ∼28 nm thick polycrystalline wurtzite GaN layer on polymeric nanofibers of an average fiber diameter of ∼70 nm. Having a flexible polymeric core and low processing temperature, these core-shell semiconducting nanofibers might have the potential to substitute brittle ceramic GaN nanofibers, which have already been shown to be high performance materials for various electronic and optoelectronic applications.
Open Access
Lateral and vertical heterostructures of h-GaN/h-AlN: electron confinement, band lineup, and quantum structures
(American Chemical Society, 2017-11) Onen, A.; Kecik, D.; Durgun, Engin; Çıracı, Salim
Lateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. Lateral heterostructures formed by periodically repeating narrow h-GaN and h-AlN stripes, which are joined commensurately along their armchair edges, behave as composite semiconducting materials. Direct-indirect characters of the fundamental band gaps and their values vary with the widths of these stripes. However, for relatively wider stripes, electronic states are confined in different stripes and make a semiconductor-semiconductor junction with normal band alignment. This way one-dimensinonal multiple quantum well structures can be generated with electrons and holes confined to h-GaN stripes. Vertical heterostructures formed by thin stacks of h-GaN and h-AlN are composite semiconductors with a tunable fundamental band gap. However, depending on the stacking sequence and number of constituent sheets in the stacks, the vertical heterostructure can transform into a junction, which displays staggered band alignment with electrons and holes separated in different stacks. The weak bonds between the cations and anions in adjacent layers distinguish these heterostructures from those fabricated using thin films of GaN and AlN thin films in wurtzite structure, as well as from van der Waals solids. Despite the complexities due to confinement effects and charge transfer across the interface, the band diagram of the heterostructures in the direct space and band lineup are conveniently revealed from the electronic structure projected to the atoms or layers. Prominent features in the optical spectra of the lateral composite structures are observed within the limits of those of 2D parent constituents; however, significant deviations from pristine 2D constituents are observed for vertical heterostructures. Important dimensionality effects are revealed in the lateral and vertical heterostructures.
Open Access
Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition
(Royal Society of Chemistry, 2015-08) Haider A.; Kizir S.; Ozgit Akgun, C.; Goldenberg, E.; Leghari, S. A.; Okyay, Ali Kemal; Bıyıklı, Necmi
Herein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic Ga and In precursors along with N2/H2 and N2 plasma, respectively. The effect of In content on structural, optical, and morphological properties of InxGa1−xN thin films was investigated. Grazing incidence X-ray diffraction showed that all InxGa1−xN thin films were polycrystalline with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy depicted the peaks of In, Ga, and N in bulk of the film and revealed the presence of relatively low impurity contents. In contents of different InxGa1−xN thin films were determined by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Transmission electron microscopy also confirmed the polycrystalline structure of InxGa1−xN thin films, and elemental mapping further revealed the uniform distribution of In and Ga within the bulk of InxGa1−xN films. Higher In concentrations resulted in an increase of refractive indices of ternary alloys from 2.28 to 2.42 at a wavelength of 650 nm. The optical band edge of InxGa1−xN films red-shifted with increasing In content, confirming the tunability of the band edge with alloy composition. Photoluminescence measurements exhibited broad spectral features with an In concentration dependent wavelength shift and atomic force microscopy revealed low surface roughness of InxGa1−xN films with a slight increase proportional to In content.
Open Access
Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
(American Institute of Physics Inc., 2016) Haider, A.; Kizir, S.; Bıyıklı, Necmi
In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growth experiments were trimethylindium (TMI) and N2 plasma. Process parameters including TMI pulse time, N2 plasma exposure time, purge time, and deposition temperature have been optimized for self-limiting growth of InN with in ALD window. With the increase in exposure time of N2 plasma from 40 s to 100 s at 200 °C, growth rate showed a significant decrease from 1.60 to 0.64 Å/cycle. At 200 °C, growth rate saturated as 0.64 Å/cycle for TMI dose starting from 0.07 s. Structural, optical, and morphological characterization of InN were carried out in detail. X-ray diffraction measurements revealed the hexagonal wurtzite crystalline structure of the grown InN films. Refractive index of the InN film deposited at 200 °C was found to be 2.66 at 650 nm. 48 nm-thick InN films exhibited relatively smooth surfaces with Rms surface roughness values of 0.98 nm, while the film density was extracted as 6.30 g/cm3. X-ray photoelectron spectroscopy (XPS) measurements depicted the peaks of indium, nitrogen, carbon, and oxygen on the film surface and quantitative information revealed that films are nearly stoichiometric with rather low impurity content. In3d and N1s high-resolution scans confirmed the presence of InN with peaks located at 443.5 and 396.8 eV, respectively. Transmission electron microscopy (TEM) and selected area electron diffraction (SAED) further confirmed the polycrystalline structure of InN thin films and elemental mapping revealed uniform distribution of indium and nitrogen along the scanned area of the InN film. Spectral absorption measurements exhibited an optical band edge around 1.9 eV. Our findings demonstrate that HCPA-ALD might be a promising technique to grow crystalline wurtzite InN thin films at low substrate temperatures.
Open Access
Nanograined surface shell wall controlled ZnO–ZnS core–shell nanofibers and their shell wall thickness dependent visible photocatalytic properties
(Royal Society of Chemistry, 2017) Ranjith, K. S.; Senthamizhan A.; Balusamy, B.; Uyar, Tamer
The core-shell form of ZnO-ZnS based heterostructural nanofibers (NF) has received increased attention for use as a photocatalyst owing to its potential for outstanding performance under visible irradiation. One viable strategy to realize the efficient separation of photoinduced charge carriers in order to improve catalytic efficiency is to design core-shell nanostructures. But the shell wall thickness plays a vital role in effective carrier separation and lowering the recombination rate. A one dimensional (1D) form of shell wall controlled ZnO-ZnS core-shell nanofibers has been successfully prepared via electrospinning followed by a sulfidation process. The ZnS shell wall thickness can be adjusted from 5 to 50 nm with a variation in the sulfidation reaction time between 30 min and 540 min. The results indicate that the surfaces of the ZnO nanofibers were converted to a ZnS shell layer via the sulfidation process, inducing visible absorption behavior. Photoluminescence (PL) spectral analysis indicated that the introduction of a ZnS shell layer improved electron and hole separation efficiency. A strong correlation between effective charge separation and the shell wall thickness aids the catalytic behavior of the nanofiber network and improves its visible responsive nature. The comparative degradation efficiency toward methylene blue (MB) has been studied and the results showed that the ZnO-ZnS nanofibers with a shell wall thickness of ∼20 nm have 9 times higher efficiency than pristine ZnO nanofibers, which was attributed to effective charge separation and the visible response of the heterostructural nanofibers. In addition, they have been shown to have a strong effect on the degradation of Rhodamine B (Rh B) and 4-nitrophenol (4-NP), with promising reusable catalytic efficiency. The shell layer upgraded the nanofiber by acting as a protective layer, thus avoiding the photo-corrosion of ZnO during the catalytic process. A credible mechanism for the charge transfer process and a mechanism for photocatalysis supported by trapping experiments in the ZnO-ZnS heterostructural system for the degradation of an aqueous solution of MB are also explicated. Trapping experiments indicate that h+ and OH are the main active species in the ZnO-ZnS heterostructural catalyst, which do not effectively contribute in a bare ZnO catalytic system. Our work also highlights the stability and recyclability of the core-shell nanostructure photocatalyst and supports its potential for environmental applications. We thus anticipate that our results show broad potential in the photocatalysis domain for the design of a visible light functional and reusable core-shell nanostructured photocatalyst.
Open Access
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014) Goldenberg, E.; Ozgit-Akgun, C.; Bıyıklı, Necmi; Kemal Okyay, A.
Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al xGa1-xN films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼ 85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and AlxGa1-xN were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33-1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga 2O3 formation and following phase change. The optical bandgap value of as-deposited AlxGa1-xN films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films. © 2014 American Vacuum Society.
Open Access
Red emission from copper-vacancy color centers in zinc sulfide colloidal nanocrystals
(American Chemical Society, 2023-03-28) Thompson, S. M.; Şahin, Cüneyt; Yang, S.; Flatté, M. E.; Murray, C. B.; Bassett, L. C.; Kagan, C. R.
Copper-doped zinc sulfide (ZnS:Cu) exhibits down-conversion luminescence in the UV, visible, and IR regions of the electromagnetic spectrum; the visible red, green, and blue emission is referred to as R-Cu, G-Cu, and B-Cu, respectively. The sub-bandgap emission arises from optical transitions between localized electronic states created by point defects, making ZnS:Cu a prolific phosphor material and an intriguing candidate material for quantum information science, where point defects excel as single-photon sources and spin qubits. Colloidal nanocrystals (NCs) of ZnS:Cu are particularly interesting as hosts for the creation, isolation, and measurement of quantum defects, since their size, composition, and surface chemistry can be precisely tailored for biosensing and optoelectronic applications. Here, we present a method for synthesizing colloidal ZnS:Cu NCs that emit primarily R-Cu, which has been proposed to arise from the CuZn-VS complex, an impurity-vacancy point defect structure analogous to well-known quantum defects in other materials that produce favorable optical and spin dynamics. First-principles calculations confirm the thermodynamic stability and electronic structure of CuZn-VS. Temperature- and time-dependent optical properties of ZnS:Cu NCs show blueshifting luminescence and an anomalous plateau in the intensity dependence as temperature is increased from 19 K to 290 K, for which we propose an empirical dynamical model based on thermally activated coupling between two manifolds of states inside the ZnS bandgap. Understanding of R-Cu emission dynamics, combined with a controlled synthesis method for obtaining R-Cu centers in colloidal NC hosts, will greatly facilitate the development of CuZn-VS and related complexes as quantum point defects in ZnS.
Open Access
Self-assembled peptide nanofiber templated ALD growth of TiO2 and ZnO semiconductor nanonetworks
(Wiley - V C H Verlag GmbH & Co. KGaA, 2016) Garifullin, R.; Eren, H.; Ulusoy, T. G.; Okyay, Ali Kemal; Bıyıklı, Necmi; Güler, Mustafa O.
Here peptide amphiphile (PA) nanofiber network is exploited as a three‐dimensional soft template to construct anatase TiO2 and wurtzite ZnO nanonetworks. Atomic layer deposition (ALD) technique is used to coat the organic nanonetwork template with TiO2and ZnO. ALD method enables uniform and conformal coatings with precisely controlled TiO2 and ZnO thickness. The resulting semiconducting metal oxide nanonetworks are utilized as anodic materials in dye‐sensitized solar cells. Effect of metal oxide layer thickness on device performance is studied. The devices based on thin TiO2 coatings (<10 nm) demonstrate considerable dependence on material thickness, whereas thicker (>17 nm) ZnO‐based devices do not show an explicit correlation.
Open Access
Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
(2012) Ozgit, C.; Donmez I.; Alevli, M.; Bıyıklı, Necmi
We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3). At 185 °C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of ∼ 0.86 Å/cycle from 100 to 200 °C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≤ 225 °C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185 °C were investigated by X-ray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185 °C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at ∼ 5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum. © 2011 Elsevier B.V. All rights reserved.
Open Access
Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2016) Kizir, S.; Haider, A.; Bıyıklı, Necmi
Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 ï¿½C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt3 and N2/H2 plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm3 for GaN grown on Si (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2-3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9-10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.
Open Access
Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution
(Springer Netherlands, 2016-05) Demirel, A.; Öztaş T.; Kurşungöz, C.; Yılmaz, İ.; Ortaç, B.
We demonstrate the synthesis of GaN nanocrystals (NCs) with the sizes of less than the doubled exciton Bohr radius leading quantum confinement effects via a single-step technique. The generation of colloidal GaN nanoparticles (NPs) in organic solution through nanosecond (ns) and femtosecond (fs) pulsed laser ablation (PLA) of GaN powder was carried out. Ns PLA in ethanol and polymer matrix resulted in amorphous GaN-NPs with the size distribution of 12.4 ± 7.0 and 6.4 ± 2.3 nm, respectively, whereas fs PLA in ethanol produced colloidal GaN-NCs with spherical shape within 4.2 ± 1.9 nm particle size distribution. XRD and selected area electron diffraction analysis of the product via fs PLA revealed that GaN-NCs are in wurtzite structure. Moreover, X-ray photoelectron spectroscopy measurements also confirm the presence of GaN nanomaterials. The colloidal GaN-NCs solution exhibits strong blue shift in the absorption spectrum compared to that of the GaN-NPs via ns PLA in ethanol. Furthermore, the photoluminescence emission behavior of fs PLA-generated GaN-NCs in the 295–400 nm wavelength range is observed with a peak position located at 305 nm showing a strong blue shift with respect to the bulk GaN.
Open Access
Synthesis of fluorescent core-shell nanomaterials and strategies to generate white light
(American Institute of Physics Inc., 2015) Singh, A.; Kaur, R.; Pandey, O. P.; Wei, X.; Sharma, M.
In this work, cadmium free core-shell ZnS:X/ZnS (X-=-Mn, Cu) nanoparticles have been synthesized and used for white light generation. First, the doping concentration of Manganese (Mn) was varied from 1% to 4% to optimize the dopant related emission and its optimal value was found to be 1%. Then, ZnS shell was grown over ZnS:Mn(1%) core to passivate the surface defects. Similarly, the optimal concentration of Copper (Cu) was found to be 0.8% in the range varied from 0.6% to 1.2%. In order to obtain an emission in the whole visible spectrum, dual doping of Mn and Cu was done in the core and the shell, respectively. A solid-solid mixing in different ratios of separately doped quantum dots (QDs) emitting in the blue green and the orange region was performed. Results show that the optimum mixture of QDs excited at 300-nm gives Commission Internationale del'Éclairage color coordinates of (0.35, 0.36), high color rendering index of 88, and correlated color temperature of 4704-K with minimum self-absorption. © 2015 AIP Publishing LLC.
Open Access
Synthesis of mesostructured metal sulfide films using [M(H2O)n](NO3)2:P85 (M = Cd(II) and Zn(II)) liquid crystalline mesophases
(2008) Türker, Y.; Dag, Ö.
Transition metal salt-pluronic liquid crystalline (TMS-PLC) mesophases of A-P85, B-P85 and ((1 - x)A + xB)-P85 (where A is [Cd(H2O) 4](NO3)2, B is [Zn(H2O) 6](NO3)2 and P85 is a triblock copolymer, HO(CH2CH2O)26(CH2(CH 3)CHO)40(CH2CH2O)26H) have been used to produce mesostructured metal sulfide films. The TMS-PLC mesophases of A-P85, B-P85 and (A + B)-P85 are well ordered with a salt/P85 mole ratio between 3.0 and 11.0 with a 3D hexagonal structure. The reaction between the mesophases of A-P85, B-P85 and ((1 - x)A + xB)-P85 and H2S gas at room temperature produces mesostructured CdS, ZnS and Cd1-xZn xS films, respectively. The initial salt concentrations in the TMS-PLC phase determine the final Cd(ii) and Zn(ii) ions in the Cd 1-xZnxS crystal structure, where x can be controlled between 0.0 and 1.0. Fresh samples of the mesophase reacted under an H 2S atmosphere are continues films that slowly leach out excess P85 producing P85 rich dendrite domains and aggregates of 50 to 100 nm particles of mesostructured CdS, ZnS or Cd1-xZnxS. However, well homogenized TMS-PLC mesophases produce stable film samples upon H2S reaction.
Open Access
Wavelength dependent color conversion of CdSe/ZnS core/shell nanocrystals for white LEDs
(IEEE, 2009) Nizamoğlu, Sedat; Demir, Hilmi Volkan
Nanocrystals (NCs) provide narrow emission spectrum that can be conveniently tuned using quantum size effect. This ability to adjust and control emission spectrum of NCs makes them strong candidates for use in white color conversion light emitting diodes. For example, they are possibly be used for solid state lighting applications including indoor lighting, architectural lighting and scotopic street lighting, where spectrally tuned color conversion is necessary. In device research CdSe/ZnS core/shell nanocrystals are the most commonly used ones because of their good electronic isolation coming from ZnS shells and the resulting high quantum efficiency (QE) (i.e., >50% in solution) [1]. However, when these nanocrystals are integrated into the solid film, e.g., for white light generation, their in-film QE undesirably drops (despite their high QE in solution). Hence, this adversely affects the overall efficiency of the integrating devices that incorporate these NCs [2]. There have been various studies to understand the in-film optical properties of CdSe/ZnS core/shell NCs [3-5]. However, their spectrally resolved in-film quantum efficiency (i.e., the ratio of the number of photons emitted by the nanocrystal film to the number of photons absorbed in the nanocrystal film) and their photon conversion efficiency (i.e., the ratio of the number of photons emitted by the nanocrystal film to the number of photons incident to the nanocrystal film) have not been investigated in these previous studies. © 2009 IEEE.