Browsing by Subject "Zinc oxide"

Now showing 1 - 20 of 47

Open Access
2-nm laser-synthesized Si nanoparticles for low-power charge trapping memory devices
(IEEE, 2014-08) El-Atab, N.; Özcan, Ayşe; Alkış, Sabri; Okyay, Ali Kemal; Nayfeh, A.
In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication and filtration. The active layer of the memory was deposited by Atomic Layer Deposition (ALD) and spin coating technique was used to deliver the Si-NPs across the sample. The nanoparticles provided a good retention of charges (>10 years) in the memory cells and allowed for a large threshold voltage (Vt) shift (3.4 V) at reduced programming voltages (1 V). The addition of ZnO to the charge trapping media enhanced the electric field across the tunnel oxide and allowed for larger memory window at lower operating voltages. © 2014 IEEE.
Open Access
Actively tunable thin films for visible light by thermo-optic modulation of ZnO
(Wiley-VCH Verlag, 2016) Battal, E.; Okyay, Ali Kemal
Applications of active control of light matter interactions within integrated photonics, hyper-spectral imaging, reconfigurable lasers, and selective bio-surfaces have enormously increased the demand for realization of optical modulation covering the spectrum from ultraviolet (UV) up to infrared (IR) wavelength range. In this study, we demonstrate ZnO-based actively tunable perfect absorber operating within UV and visible spectrum with more than 5 nm shift in the resonant absorption wavelength. Using spectroscopic ellipsometry technique, we extract temperature-dependent optical constants of atomic layer-deposited ZnO within 0.3-1.6 and 4-40 μm spectra. We also observe bandgap narrowing of ZnO at elevated temperatures due to lattice relaxation verified by the red-shift of phonon-modes. At around its bandgap, refractive index variations up to 0.2 is obtained and ZnO is shown to exhibit thermo-optic coefficient as high as 9.17 Ã— 10-4 K-1 around the bandgap which is the largest among well-known large bandgap materials. Â© 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
An all-ZnO microbolometer for infrared imaging
(Elsevier BV, 2014) Kesim, Y. E.; Battal, E.; Tanrikulu, M. Y.; Okyay, Ali Kemal
Microbolometers are extensively used for uncooled infrared imaging applications. These imaging units generally employ vanadium oxide or amorphous silicon as the active layer and silicon nitride as the absorber layer. However, using different materials for active and absorber layers increases the fabrication and integration complexity of the pixel structure. In order to reduce fabrication steps and therefore increase the yield and reduce the cost of the imaging arrays, a single layer can be employed both as the absorber and the active material. In this paper, we propose an all-ZnO microbolometer, where atomic layer deposition grown zinc oxide is employed both as the absorber and the active material. Optical constants of ZnO are measured and fed into finite-difference-time-domain simulations where absorption performances of microbolometers with different gap size and ZnO film thicknesses are extracted. Using the results of these optical simulations, thermal simulations are conducted using finite-element-method in order to extract the noise equivalent temperature difference (NETD) and thermal time constant values of several bolometer structures with different gap sizes, arm and film thicknesses. It is shown that the maximum performance of 171 mK can be achieved with a body thickness of 1.1 μm and arm thickness of 50 nm, while the fastest response with a time constant of 0.32 ms can be achieved with a ZnO thickness of 150 nm both in arms and body. © 2014 Elsevier B.V. All rights reserved.
Open Access
Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxides
(American Chemical Society, 2016) Haider, A.; Deminskyi, P.; Khan, T. M.; Eren, H.; Bıyıklı, Necmi
Area-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. Here, we demonstrate a methodology to achieve AS-ALD by using inductively couple plasma (ICP) grown fluorocarbon polymer film as hydrophobic blocking layer for selective deposition. Our approach has been tested for metal-oxide materials including ZnO, Al2O3, and HfO2. Contact angle, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometer, and scanning electron microscopy (SEM) measurements were performed to investigate the blocking ability of plasma polymerized fluorocarbon layers against ALD-grown metal-oxide films. A considerable growth inhibition for ZnO has been observed on fluorocarbon coated Si(100) surfaces, while the same polymerized surface caused a relatively slow nucleation for HfO2 films. No growth selectivity was obtained for Al2O3 films, displaying almost the same nucleation behavior on Si and fluorocarbon surfaces. Thin film patterning has been demonstrated using this strategy by growing ZnO on lithographically patterned fluorocarbon/Si samples. High resolution SEM images and XPS line scan confirmed the successful patterning of ZnO up to a film thickness of ∼15 nm. © 2016 American Chemical Society.
Open Access
Atomic Layer Deposition for Vertically Integrated ZnO Thin Film Transistors: Toward 3D High Packing Density Thin Film Electronics
(Wiley-VCH Verlag, 2017) Sisman, Z.; Bolat, S.; Okyay, Ali Kemal
We report on the first demonstration of the atomic layer deposition (ALD) based three dimensional (3D) integrated ZnO thin film transistors (TFTs) on rigid substrates. Devices exhibit high on-off ratio (∼106) and high effective mobility (∼11.8 cm2 V−1 s−1). It has also been demonstrated that the steps of fabrication result in readily stable electrical characteristics in TFTs, eliminating the need for post-production steps. These results mark the potential of our fabrication method for the semiconducting metal oxide-based vertical-integrated circuits requiring high packing density and high functionality. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Open Access
Atomic-layer-deposited zinc oxide as tunable uncooled infrared microbolometer material
(Wiley-VCH Verlag, 2014) Battal, E.; Bolat, S.; Tanrikulu, M. Y.; Okyay, Ali Kemal; Akin, T.
ZnO is an attractive material for both electrical and optical applications due to its wide bandgap of 3.37 eV and tunable electrical properties. Here, we investigate the application potential of atomic-layer-deposited ZnO in uncooled microbolometers. The temperature coefficient of resistance is observed to be as high as-10.4% K-1 near room temperature with the ZnO thin film grown at 120 °C. Spectral noise characteristics of thin films grown at various temperatures are also investigated and show that the 120 °C grown ZnO has a corner frequency of 2 kHz. With its high TCR value and low electrical noise, atomic-layer-deposited (ALD) ZnO at 120 °C is shown to possess a great potential to be used as the active layer of uncooled microbolometers. The optical properties of the ALD-grown ZnO films in the infrared region are demonstrated to be tunable with growth temperature from near transparent to a strong absorber. We also show that ALD-grown ZnO can outperform commercially standard absorber materials and appears promising as a new structural material for microbolometer-based applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Open Access
Comparative study of optically activated nanocomposites with photocatalytic TiO2 and ZnO nanoparticles for massive environmental decontamination
(S P I E - International Society for Optical Engineering, 2007) Tek, S.; Mutlugun, E.; Soganci, I. M.; Perkgoz, N. K.; Yucel, D.; Celiker, G.; Demir, Hilmi Volkan
Nanocomposites that incorporate TiO2 and ZnO nanoparticles separately in three-dimensional solgel matrices through full chemical integration are prepared to perform highly efficient photocatalytic activities for applications of environmental decontamination. Spectral responses of photocatalytic TiO2 and ZnO nanoparticles exposed to UV activation for self-cleaning process were obtained as also their optical relative spectral efficiency curves from 270 to 370 nm in the UV regime. Our investigations of the optimal conditions to increase their spectral photocatalytic efficiencies resulted in remarkably high levels of optical recovery and efficiency.
Open Access
Development of photoanodes for performance enhanced dye sensitized solar cells
(2015-08) Ulusoy, Türkan Gamze
With a raising demand for clean and renewable energy sources in recent decades, dye sensitized solar cell (DSSC), as an efficient and low-cost solar cell technology, have attracted considerable attention and several efforts have been directed for the optimization of all components of DSSCs including photoanode, sensitizer dye, hole transport layer and counter electrode. The objective of this thesis is to provide a better understanding on the function of photoanode in overall performance of DSSC device by highlighting problems and limitations and offering proper solutions to tackle these deficiencies. Based on this understanding, this thesis reports, fabrication, characterization and analysis of designed three different cells to boost device photovoltaic performance which includes: 1) angstrom thick ZnO-sheathed TiO2 nanowires as photoanodes, 2) multifunctional omnidirectional antireflective coating, 3) peptide nanofiber network templated ALD-grown TiO2 nanostructures as photoanodes in DSSC. Since photoanode-dye interface engineering is of utmost importance, the first of our proposals in this thesis relies on a systematic approach to understand the impact of atomic layer deposited (ALD) angstrom-thick ZnO sheath on hydrothermally grown TiO2 nanowires (NWs) core utilized as photoanodes in DSSC. The results show that this ultrathin layer will contribute at device efficiency enhancement almost three times via reducing recombination rate of injected electrons, enhancement in collection efficiency of electrons via reducing density of surface trap states without hampering injection efficiency and increased dye uptake on TiO2 nanowires’ surface which in turn leads to increased light absorption. On the other work, we also utilized multifunctional organically modified silica (ORMOSIL) as antireflection coating layer on DSSC to improve conversion efficiency of the device via reduction in the light reflection. ORMOSIL coated DSSC surfaces show a low-reflective omnidirectional response in a wide range of wavelengths (400-800 nm). At normal incidence (𝜃=0°), the short circuit current density (JSC) is improved to an amount of 23% as a result of ORMOSIL coating. In addition, JSC meets even higher amounts of enhancement where 84% increase is recorded at 𝜃=30°. Moreover, this coating exhibits superhydrophobicity representing a contact angle of 155º. Finally, we proposed and implemented, self-assembled peptide amphiphiles nanofiber 3D networks in order to obtain TiO2 nanotube structures as a template in DSSC. These self-assembled peptide amphiphiles are resistant to high temperature and more durable than other kinds of peptide amphiphiles. The advantage of this 3D fiber composed template is its high surface area and interconnected solid support providing an effective template for formation of TiO2 network using ALD. On the other hand, since ALD offers uniform and conformal coating of high aspect ratio features, it ensures an ideal thin film coating method on high surface area nano-template materials such as the peptide nanofiber templates proposed in this study.
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Digitally alloyed ZnO and TiO2 thin film thermistors by atomic layer deposition for uncooled microbolometer applications
(AVS Science and Technology Society, 2017) Tilkioğlu, Bilge T.; Bolat, Sami; Tanrıkulu, Mahmud Yusuf; Okyay, Ali Kemal
The authors demonstrate the digital alloying of ZnO and TiO2 via atomic layer deposition method to be utilized as the active material of uncooled microbolometers. Depositions are carried out at 200 °C. Crystallinity of the material is shown to be degraded with the increase of the Ti content in the grown film. A maximum temperature coefficient of resistance (TCR) of −5.96%/K is obtained with the films containing 12.2 at. % Ti, and the obtained TCR value is shown to be temperature insensitive in the 15-22 °C, thereby allowing a wide range of operation temperatures for the low cost microbolometers. © 2017 American Vacuum Society.
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Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013) El-Atab, N.; Alqatari, S.; Oruc F.B.; Souier, T.; Chiesa, M.; Okyay, Ali Kemal; Nayfeh, A.
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively. © 2013 © 2013 Author(s).
Open Access
An efficient non-Lambertian organic light-emitting diode using imprinted submicron-size zinc oxide pillar arrays
(AIP, 2013) Liu, S. W.; Wang, J. X.; Divayana, Y.; Dev, K.; Tan S.T.; Demir, Hilmi Volkan; Sun, X. W.
We report phosphorescent organic light-emitting diodes with a substantially improved light outcoupling efficiency and a wider angular distribution through applying a layer of zinc oxide periodic nanopillar arrays by pattern replication in non-wetting templates technique. The devices exhibited the peak emission intensity at an emission angle of 40° compared to 0° for reference device using bare ITO-glass. The best device showed a peak luminance efficiency of 95.5 ± 1.5 cd/A at 0° emission (external quantum efficiency - EQE of 38.5 ± 0.1%, power efficiency of 127 ± 1 lm/W), compared to that of the reference device, which has a peak luminance efficiency of 68.0 ± 1.4 cd/A (EQE of 22.0 ± 0.1%, power efficiency of 72 ± 1 lm/W). © 2013 American Institute of Physics.
Open Access
Electronic and optical properties of atomic layer-deposited ZnO and TiO2
(Springer New York LLC, 2018) Ates, H.; Bolat, S.; Oruc, F.; Okyay, Ali Kemal
Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.
Open Access
Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer
(Pergamon Press, 2015) Ghobadi, A.; Yavuz, H. I.; Ulusoy, T. G.; Icli, K. C.; Ozenbas, M.; Okyay, Ali Kemal
In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed.
Open Access
Enhanced photocatalytic activity of homoassembled ZnO nanostructures on electrospun polymeric nanofibers: a combination of atomic layer deposition and hydrothermal growth
(Elsevier, 2014) Kayaci, F.; Vempati S.; Ozgit Akgun, C.; Bıyıklı, Necmi; Uyar, Tamer
We report on the synthesis and photocatalytic activity (PCA) of electrospun poly(acrylonitrile) (PAN) nanofibrous mat decorated with nanoneedles of zinc oxide (ZnO). Apart from a detailed morphological and structural characterization, the PCA has been carefully monitored and the results are discussed elaborately when juxtaposed with the photoluminescence. The present hierarchal homoassembled nanostructures are a combination of two types of ZnO with diverse optical qualities, i.e. (a) controlled deposition of ZnO coating on nanofibers with dominant oxygen vacancies and significant grain boundaries by atomic layer deposition (ALD), and (b) growth of single crystalline ZnO nanoneedles with high optical quality on the ALD seeds via hydrothermal process. The needle structure (~25. nm in diameter with an aspect ratio of ~24) also supports the vectorial transport of photo-charge carriers, which is crucial for high catalytic activity. Furthermore, it is shown that enhanced PCA is because of the catalytic activity at surface defects (on ALD seed), valence band, and conduction band (of ZnO nanoneedles). PCA and durability of the PAN/ZnO nanofibrous mat have also been tested with aqueous solution of methylene blue and the results showed almost no decay in the catalytic activity of this material when reused.
Open Access
Fast and quick degradation properties of doped and capped ZnO nanoparticles under UV-Visible light radiations
(Elsevier Ltd, 2016) Mittal, M.; Sharma, M.; Pandey, O. P.
Undoped and Manganese (Mn) doped zinc oxide (ZnO) (Zn1- xMnxO, x=0.005, 0.01, 0.015 and 0.02) nanoparticles (NPs) capped with (1.0%) Thioglycerol (TG) has been successfully synthesized by co-precipitation method. Optical and morphological studies have been done for photophysical and structural analysis of synthesized materials. The photocatalytic activity of undoped and Mn doped ZnO NPs were investigated by degradation of crystal violet (CV) dye under UV-Visible light radiations. It has been found that Mn (1.0%) doping concentration is optimal for photophysical and photocatalytic properties. When the pH of as synthesized optimum doped ZnO NPs varied from natural pH i.e. from 6.7 to 8.0 and 10.0, the degradation of CV dye increases from 92% to 95% and 98% in 180min respectively. Further on increasing the pH of optimum doped synthesized NPs to 12.0, almost 100% degradation has been achieved in 150min. Optimum doped photocatalyst synthesized at pH-12.0 has also effectively degraded the CV dye solution in acidic and basic medium thus showed its utility in various industries. However, it has been found that 100% of CV dye quickly degraded in 30min when only 1.0% of hydrogen peroxide (H2O2) was introduced along with optimized NPs synthesized at pH-12. Kinetic studies show that the degradation of CV dye follows pseudo first and second-order kinetic law. Further an industrial anionic polyazo Sirius red F3B (SRF3B) dye has been degraded to 100% with optimized NPs synthesized at pH-12.0 in 15min only.
Open Access
Flexible organic-inorganic core-shell nanofibers by electrospinning and atomic layer deposition
(CRC Press, 2012) Kayacı, Fatma; Çağla, Özgit-Akgün; Dönmez, İnci; Bıyıklı, Necmi; Uyar, Tamer
Organic-inorganic core-shell nanofibers were fabricated by combining electrospinning and atomic layer deposition (ALD). In the first step, nylon66 (polymeric organic core) nanofibers having different average fiber diameters (∼100 nm, ∼250 nm and ∼650 nm) were electrospun by using different solvent systems and polymer concentrations. In the second step, uniform and conformal layer of zinc oxide (ZnO) (inorganic shell) with precise thickness (∼90 nm) and composition on the round surface of the nylon nanofibers were deposited by ALD. The core-shell nylon66-ZnO nanofibers have shown unique properties such as structural flexibility due to the polymeric core and photocatalytic activity due to the ZnO shell layer.
Open Access
Growth of ∼3-nm ZnO nano-islands using Atomic layer deposition
(IEEE, 2016) El-Atab, N.; Chowdhury, F. I.; Ulusoy, Türkan Gamze; Ghobadi, Amir; Nazirzadeh, Amin; Okyay, Ali Kemal; Nayfeh, A.
In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.
Open Access
High optical efficiency of ZnO nanoparticles
(IEEE, 2007) Tek, Sümeyra; Demir, Hilmi Volkan; Yucel, D.; Celiker G.
We develop optically efficient photocatalytic ZnO nanoparticles that we chemically embed and well disperse into host PVAc thin films and experimentally demonstrate the highest optical efficiency of ∼70% in ZnO nanoparticle films, with increasing optical spectral efficiency as the excitation wavelength is swept from 370 nm to 290 nm. ©2007 Optical Society of America.
Open Access
Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission
(2014) El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, Ali Kemal; Nayfeh, A.
A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2 nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (ΔVt) vs. programming voltage is studied with and without the silicon nanoparticles. Applying -1 V for 5 s at the gate of the memory with nanoparticles results in a ΔVt of 3.4 V, and the memory window can be up to 8 V with an excellent retention characteristic (>10 yr). Without nanoparticles, at -1 V programming voltage, the ΔVt is negligible. In order to get ΔVt of 3.4 V without nanoparticles, programming voltage in excess of 10 V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1 V the electric field across the 3.6 nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ΔVt vs. electric field across the tunnel oxide shows square root dependence at low fields (E 1 MV/cm) and a square dependence at higher fields (E > 2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields. © 2014 AIP Publishing LLC.
Open Access
Low temperature atomic layer deposited ZnO photo thin film transistors
(AVS Science and Technology Society, 2014) Oruc, F. B.; Aygun, L. E.; Donmez, I.; Bıyıklı, Necmi; Okyay, Ali Kemal; Yu, H. Y.
ZnO thin film transistors (TFTs) are fabricated on Si substrates using atomic layer deposition technique. The growth temperature of ZnO channel layers are selected as 80, 100, 120, 130, and 250°C. Material characteristics of ZnO films are examined using x-ray photoelectron spectroscopy and x-ray diffraction methods. Stoichiometry analyses showed that the amount of both oxygen vacancies and interstitial zinc decrease with decreasing growth temperature. Electrical characteristics improve with decreasing growth temperature. Best results are obtained with ZnO channels deposited at 80°C; Ion/Ioff ratio is extracted as 7.8 × 109 and subthreshold slope is extracted as 0.116 V/dec. Flexible ZnO TFT devices are also fabricated using films grown at 80°C. ID-VGS characterization results showed that devices fabricated on different substrates (Si and polyethylene terephthalate) show similar electrical characteristics. Sub-bandgap photo sensing properties of ZnO based TFTs are investigated; it is shown that visible light absorption of ZnO based TFTs can be actively controlled by external gate bias. © 2014 American Vacuum Society.