Browsing by Subject "Wavelength ranges"

Now showing 1 - 3 of 3

Open Access
Model-based spectral analysis of photon propagation through nanoparticle-labeled epithelial tissues
(SPIE, 2011) Cihan, Can; Arifler, D.
Metal nanoparticles can function as optical contrast enhancers for reflectance-based diagnosis of epithelial precancer. We carry out Monte Carlo simulations to model photon propagation through normal tissues, unlabeled precancerous tissues, and precancerous tissues labeled with gold nanospheres and we compute the spectral reflectance response of these different tissue states. The results indicate that nanoparticle-induced changes in the spectral reflectance profile of tissues depend not only on the properties of these particles but also on the source-detector geometry used. When the source and detector fibers are oriented side by side and perpendicular to the tissue surface, the reflectance intensity of precancerous tissue is lower compared to that of normal tissue over the entire wavelength range simulated and addition of nanospheres enhances this negative contrast. When the fibers are tilted toward each other, the reflectance intensity of precancerous tissue is higher compared to that of normal tissue and labeling with nanospheres causes a significant enhancement of this positive contrast. The results also suggest that model-based spectral analysis of photon propagation through nanoparticle-labeled tissues provides a useful framework to quantify the extent of achievable contrast enhancement due to external labeling and to assess the diagnostic potential of nanoparticle-enhanced optical measurements. © 2011 SPIE-OSA.
Open Access
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
(IEEE, 2014) Tekcan, B.; Alkis, S.; Alevli, M.; Dietz, N.; Ortac, B.; Bıyıklı, Necmi; Okyay, Ali Kemal
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.
Open Access
Plasmonic gratings for enhanced near infrared sensitivity of Silicon based Schottky photodetectors
(IEEE, 2011) Polat, Kazım Gürkan; Aygun, Levent Erdal; Okyay, Ali Kemal
Schottky photodetectors have been intensively investigated due to their high speeds, low device capacitances, and sensitivity in telecommunication standard bands, in the 0.8μm to 1.5μm wavelength range. Due to extreme cost advantage of Silicon over compound semiconductors, and seamless integration with VLSI circuits, metal-Silicon Schottky photodetectors are attractive low cost alternatives to InGaAs technology. However, efficiencies of Schottky type photodetectors are limited due to thin absorption region. Previous efforts such as resonant cavities increase the sensitivity using optical techniques, however their integration with VLSI circuits is difficult. Therefore, there is a need for increasing Schottky detector sensitivity, in a VLSI compatible fashion. To address this problem, we design plasmonic grating structures to increase light absorption at the metal-Silicon Schottky interface. There are earlier reports of plasmonic structures to increase Schottky photodetector sensitivity, with a renowned interest in the utilization of plasmonic effects to improve the absorption characteristics of metal-semiconductor interfaces. In this work, we report the design, fabrication and characterization of Gold-Silicon Schottky photodetectors with enhanced absorption in the near infrared region. © 2011 IEEE.