A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
Date
2014
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Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
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Publisher
IEEE
Volume
35
Issue
9
Pages
936 - 938
Language
English
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Abstract
We present a proof-of-concept photodetector that is sensitive in the near-infrared (NIR) range based on InN nanocrystals. Indium nitride nanocrystals (InN-NCs) are obtained through laser ablation of a high pressure chemical vapor deposition grown indium nitride thin film and are used as optically active absorption region. InN-NCs are sandwiched between thin insulating films to reduce the electrical leakage current. Under-1 V applied bias, the recorded photoresponsivity values within 600-1100-nm wavelength range are as high as (3.05 × 10-2) mA/W. An ultrathin layer of nanocrystalline InN thin film is, therefore, a promising candidate for NIR detection in large area schemes. © 2014 IEEE.
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Keywords
indium nitride , nanocrystals , near-infrared (NIR) , Photodetector , Chemical vapor deposition , Laser ablation , Nanocrystals , Photodetectors , Photons , Thin films , Electrical leakage , High pressure chemical vapor deposition , Indium nitride , Near infra red , Near-infrared range , Photoresponsivity , Thin insulating film , Wavelength ranges , Infrared devices