Browsing by Subject "Ultra-violet photodetectors"
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Item Open Access Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors(Elsevier BV, 2014) Kumar, M.; Tekcan, B.; Okyay, Ali KemalA report on GaN based metal insulator semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with atomic layer deposited (ALD) 5-nm-thick HfO2 insulating layer is presented. Very low dark current of 2.24 × 10-11 A and increased photo to dark current contrast ratio was achieved at 10 V. It was found that the dark current was drastically reduced by seven orders of magnitude at 10 V compared to samples without HfO2 insulating layer. The observed decrease in dark current is attributed to the large barrier height which is due to introduction of HfO2 insulating layer and the calculated barrier height was obtained as 0.95 eV. The peak responsivity of HfO2 inserted device was 0.44 mA/W at bias voltage of 15 V.Item Open Access Integrated AlGaN quadruple-band ultraviolet photodetectors(IOP Publishing, 2012-04-27) Gökkavas, M.; Butun, S.; Caban, P.; Strupinski, W.; Özbay, EkmelMonolithically integrated quadruple back-illuminated ultraviolet metalsemiconductormetal photodetectors with four different spectral responsivity bands were demonstrated on each of two different Al xGa 1-xN heterostructures. The average of the full-width at half-maximum (FWHM) of the quantum efficiency peaks was 18.15nm for sample A, which incorporated five 1000nm thick epitaxial layers. In comparison, the average FWHM for sample B was 9.98 nm, which incorporated nine 500nm thick epitaxial layers.Item Open Access Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures(SPIE, 2014) Tekcan, B.; Ozgit Akgun, C.; Bolat, S.; Bıyıklı, Necmi; Okyay, Ali KemalProof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).Item Open Access Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer(AVS Science and Technology Society, 2015) Kumar, M.; Tekcan, B.; Okyay, Ali KemalThe authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO2 is significantly reduced by more than two orders of magnitude compared to those without HfO2 insertion. The photoresponsivity at 360 nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO2 on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time. © 2015 American Vacuum Society.Item Open Access Thin film MoS2 nanocrystal based ultraviolet photodetector(Optical Society of American (OSA), 2012) Alkis, S.; Öztaş, T.; Aygün L.E.; Bozkurt F.; Okyay, Ali Kemal; Ortaç, B.We report on the development of UV range photodetector based on molybdenum disulfide nanocrystals (MoS2-NCs). The inorganic MoS2- NCs are produced by pulsed laser ablation technique in deionized water and the colloidal MoS2-NCs are characterized by transmission electron microscopy, Raman spectroscopy, X-ray diffraction and UV/VIS absorption measurements. The photoresponse studies indicate that the fabricated MoS 2- NCs photodetector (MoS2-NCs PD) operates well within 300-400 nm UV range, with diminishing response at visible wavelengths, due to the MoS2- NCs absorption characteristics. The structural and the optical properties of laser generated MoS2-NCs suggest promising applications in the field of photonics and optoelectronics. © 2012 Optical Society of America.