Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Date
2014
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Abstract
Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).
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Optical Engineering
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SPIE
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Deposition, Optoelectronics, Photodetectors, Ultraviolet, Atomic layer deposition, Deposition, Gallium nitride, Metals, MOS devices, Optoelectronic devices, Photodetectors, Photons, Pulsed laser deposition, Temperature, Complementary metal oxide semiconductors, Flexible optoelectronics, Gallium nitrides (GaN), Metal semiconductor metal, Optical characteristics, Photoresponsivity, Ultra-violet photodetectors, Ultraviolet, Semiconductor devices
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English