Browsing by Subject "Trapping centers"

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    Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
    (Wiley, 2001) Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö.
    Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.
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    Thermally stimulated currents in n-InS single crystals
    (Elsevier Science, 2003) Gasanly, N. M.; Aydınlı, Atilla; Yuksek, N. S.
    Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
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    Trapping centers in undoped GaS layered single crystals
    (Springer, 2003) Gasanly, N. M.; Aydınlı, Atilla; Yüksek, N. S.; Salihoglu, Ö.
    Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2 × 10-21, 2.9 × 10-23, 2.4 × 10-21, 8.0 × 10-9, 1.9 × 10-9 and 4.3 × 10-10 cm2 for the capture cross sections and 1.6 × 1013, 5.0 × 1012, 7.3 × 1012, 1.2 × 1014, 8.9 × 1013 and 2.6 × 1013 cm-3 for the concentrations, respectively.