Thermally stimulated currents in n-InS single crystals

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Thermally stimulated currents in n-InS single crystals.pdf (113.72 KB)

Date

2003

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Source Title

Materials Research Bulletin

Print ISSN

0025-5408

Electronic ISSN

1873-4227

Publisher

Elsevier Science

Volume

38

Issue

4

Pages

699 - 704

Language

English

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Article

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Abstract

Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.

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Keywords

Chalcogenides, Defects, Electrical properties, Semiconductors, Crystal structure, Defects, Electric conductivity, Electric currents, Photoluminescence, Semiconducting indium compounds, Thermal effects, Trapping centers, Single crystals

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http://hdl.handle.net/11693/24513

Published Version (Please cite this version)

http://dx.doi.org/10.1016/S0025-5408(02)01051-6

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Scholarly Publications - Physics