Thermally stimulated currents in n-InS single crystals
Date
2003
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Source Title
Materials Research Bulletin
Print ISSN
0025-5408
Electronic ISSN
1873-4227
Publisher
Elsevier Science
Volume
38
Issue
4
Pages
699 - 704
Language
English
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Journal Title
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Abstract
Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
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Keywords
Chalcogenides, Defects, Electrical properties, Semiconductors, Crystal structure, Defects, Electric conductivity, Electric currents, Photoluminescence, Semiconducting indium compounds, Thermal effects, Trapping centers, Single crystals