Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
Date
2001
Authors
Gasanly, N. M.
Aydınlı, A.
Salihoglu, Ö.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Crystal Research and Technology
Print ISSN
0232-1300
Electronic ISSN
Publisher
Wiley
Volume
36
Issue
3
Pages
295 - 301
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the data revealed three trap levels at 0.02, 0.10 and 0.26 eV. The calculation for these traps yielded 8.8 × 10-27, 1.9 × 10-25, and 3.2 × 10-21 cm2 for capture cross sections and 3.2 × 1014, 1.1 × 1016, and 1.2 × 1016 cm-3 for the concentrations, respectively.
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Book Title
Keywords
GaSe , Impurity levels , Layered crystals , Semiconductor compounds , Thermally stimulated current , Crystal growth , Crystal impurities , Electric current measurement , Electron energy levels , Electron traps , Semiconducting gallium compounds , Thermal effects , Bridgman technique , Layered crystals , Thermally stimulated current , Trapping centers , Single crystals