Browsing by Subject "Strain"

Now showing 1 - 13 of 13

Open Access
Aspects of computational homogenization at finite deformations: a unifying review from Reuss' to Voigt's Bound
(American Society of Mechanical Engineers (ASME), 2016) Saeb, S.; Steinmann, P.; Javili, A.
The objective of this contribution is to present a unifying review on strain-driven computational homogenization at finite strains, thereby elaborating on computational aspects of the finite element method. The underlying assumption of computational homogenization is separation of length scales, and hence, computing the material response at the macroscopic scale from averaging the microscopic behavior. In doing so, the energetic equivalence between the two scales, the Hill Mandel condition, is guaranteed via imposing proper boundary conditions such as linear displacement, periodic displacement and antiperiodic traction, and constant traction boundary conditions. Focus is given on the finite element implementation of these boundary conditions and their influence on the overall response of the material. Computational frameworks for all canonical boundary conditions are briefly formulated in order to demonstrate similarities and differences among the various boundary conditions. Furthermore, we detail on the computational aspects of the classical Reuss' and Voigt's bounds and their extensions to finite strains. A concise and clear formulation for computing the macroscopic tangent necessary for FE2 calculations is presented. The performances of the proposed schemes are illustrated via a series of two- and three-dimensional numerical examples. The numerical examples provide enough details to serve as benchmarks. © 2016 by ASME.
Open Access
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
(Elsevier BV * North-Holland, 2007-11-01) Lişesivdin, S. B.; Yıldız, A.; Acar, S.; Kasap, M.; Özçelik, S.; Özbay, Ekmel
The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20–350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was shown that significant parallel conduction does not occur in worked structures. In-plain growth axis strains are calculated using the total polarization-induced charge density taken as the sheet carrier density measured from the Hall effect. It was found that the calculated strain values are in good agreement with those reported. Influences of the two-step growth parameters such as growth ramp time, the annealing temperature of the GaN nucleation layer on the mobility, and density of the 2DEG are also discussed.
Open Access
Functionalized carbon nanotubes and device applications
(IOP, 2004) Çıracı, Salim; Dağ, Sefa; Yıldırım, T.; Gülseren, Oğuz; Senger, Ramazan Tuğrul
Carbon nanotubes, in which the two-dimensional hexagonal lattice of graphene is transformed into a quasi-one-dimensional lattice by conserving the local bond arrangement, provide several structural parameters for engineering novel physical properties suitable for ultimate miniaturization. Recent interest in nanoscience and nanotechnology has driven a tremendous research activity in carbon nanotubes, which has dealt with a variety of problems and produced a number of new results. Most of the effort has gone into revealing various physical properties of nanotubes and functionalizing them in different ways. This paper covers a narrow region in this enormous research field and reviews only a limited number of recent studies which fit within its scope. First, we examine selected physical properties of bare carbon nanotubes, and then study how the mechanical and electronic properties of different tubes can be modified by radial strain, structural defects and adsorption of foreign atoms and molecules. Magnetization of carbon nanotubes by foreign atom adsorption has been of particular interest. Finally, we discuss specific device models as well as fabricated devices which exploit various properties of carbon nanotubes.
Open Access
High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration
(Institute of Electrical and Electronics Engineers, 2009) Yu, H.-Y.; Ren, S.; Jung, W. S.; Okyay, Ali Kemal; Miller, D. A. B.; Saraswat, K. C.
We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.
Open Access
Metamaterial based telemetric strain sensing in different materials
(Optical Society of American (OSA), 2010) Melik, R.; Unal, E.; Perkgoz, N.K.; Puttlitz, C.; Demir, Hilmi Volkan
We present telemetric sensing of surface strains on different industrial materials using split-ring-resonator based metamaterials. For wireless strain sensing, we utilize metamaterial array architectures for high sensitivity and low nonlinearity-errors in strain sensing. In this work, telemetric strain measurements in three test materials of cast polyamide, derlin and polyamide are performed by observing operating frequency shift under mechanical deformation and these data are compared with commercially-available wired strain gauges. We demonstrate that hard material (cast polyamide) showed low slope in frequency shift vs. applied load (corresponding to high Young's modulus), while soft material (polyamide) exhibited high slope (low Young's modulus).
Open Access
Metamaterial-based wireless RF-MEMS strain sensors
(IEEE, 2010) Melik, Rohat; Ünal, Emre; Perkgoz, Nihan Kosku; Puttlitz, C.; Demir, Hilmi Volkan
Approximately 10% of the fractures do not heal properly because of the inability to monitor fracture healing. Standard radiography is not capable of discriminating whether bone healing is occurring normally or aberrantly. We propose and develop an implantable wireless sensor that monitors strain on implanted hardware in real time telemetrically. This enables clinicians to monitor fracture healing. Here we present the development and demonstration of metamaterial-based radiofrequency (RF) micro-electro-mechanical system (MEMS) strain sensors for wireless strain sensing to monitor fracture healing. The operating frequency of these sensors shifts under mechanical loading; this shift is related to the surface strain of the implantable test material. In this work, we implemented metamaterials in two different architectures as bio-implantable wireless strain sensors for the first time. These custom-design metamaterials exhibit better performance as sensors than traditional RF structures (e.g., spiral coils) because of their unique structural properties (splits). They feature a low enough operating frequency to avoid the background absorption of soft tissue and yield higher Q-factors compared to the spiral structures (because their gaps have much higher electric field density). In our first metamaterial architecture of an 5x5 array, the wireless sensor shows high sensitivity (109kHz/kgf, 5.148kHz/microstrain) with low nonlinearity-error (<200microstrain). Using our second architecture, we then improved the structure of classical metamaterial and obtained nested metamaterials that incorporate multiple metamaterials in a compact nested structure and measured strain telemetrically at low operating frequencies. This novel nested metamaterial structure outperformed classical metamaterial structure as wireless strain sensors. By employing nested metamaterial architecture, the operating frequency is reduced from 529.8 MHz to 506.2 MHz while the sensitivity is increased from 0.72 kHz/kgf to 1.09 kHz/kgf. ©2010 IEEE.
Open Access
Nested metamaterials for wireless strain sensing
(IEEE, 2009-12-28) Melik, R.; Unal, E.; Perkgoz, N. K.; Santoni, B.; Kamstock, D.; Puttlitz, C.; Demir, Hilmi Volkan
We designed, fabricated, and characterized metamaterial-based RF-microelectromechanical system (RF-MEMS) strain sensors that incorporate multiple split ring resonators (SRRs) in a compact nested architecture to measure strain telemetrically. We also showed biocompatibility of these strain sensors in an animal model. With these devices, our bioimplantable wireless metamaterial sensors are intended, to enable clinicians, to quantitatively evaluate the progression of long-bone fracture healing by monitoring the strain on the implantable fracture fixation hardware in real time. In operation, the transmission spectrum of the metamaterial sensor attached to the implantable fixture is changed when an external load is applied to the fixture, and from this change, the strain is recorded remotely. By employing telemetric characterizations, we reduced the operating frequency and enhanced the sensitivity of our novel nested SRR architecture compared to the conventional SRR structure. The nested SRR structure exhibited a higher sensitivity of 1.09 kHz/kgf operating at lower frequency compared to the classical SRR that demonstrated a sensitivity of 0.72 kHz/kgf. Using soft tissue medium, we achieved the best sensitivity level of 4.00 kHz/kgf with our nested SRR sensor. Ultimately, the laboratory characterization and in vivo biocompatibility studies support further development and characterization of a fracture healing system based on implantable nested SRR.
Open Access
On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes
(IEEE, 2013) Zhang Z.-H.; Tan S.T.; Ju, Z.; Liu W.; Ji Y.; Kyaw, Z.; Dikme, Y.; Sun, X. W.; Demir, Hilmi Volkan
InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices, increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation exhibit strong internal polarization fields and suffer from significantly reduced radiative recombination rates. A reduced polarization within the device can improve the optical matrix element, thereby enhancing the optical output power and efficiency. Here, we have demonstrated computationally that the step-doping in the quantum barriers is effective in reducing the polarization-induced fields and lowering the energy barrier for hole transport. Also, we have proven experimentally that such InGaN/GaN LEDs with Si step-doped quantum barriers indeed outperform LEDs with wholly Si-doped barriers and those without doped barriers in terms of output power and external quantum efficiency. The consistency of our numerical simulation and experimental results indicate the effects of Si step-doping in suppressing quantum-confined stark effect and enhancing the hole injection, and is promising in improving the InGaN/GaN LED performance.
Open Access
Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition
(Elsevier, 2013-02) Ozturk, M. K.; Arslan, E.; Kars, I.; Ozcelik, S.; Özbay, Ekmel
The strain analysis of GaN film on nitridated Si(111) substrate with different growth times between 0 and 660 s via metal organic chemical vapor deposition (MOCVD) was conducted based on the precise measurement of the lattice parameters by using high-resolution X-ray diffraction (HR-XRD). The nitridation time (NT) was changed at a fixed growth condition. The a- and c-lattice parameters were measured, followed by the in-plane and out-of-plane strains. Then, the biaxial and hydrostatic components were extracted from the total strain values obtained, and were then discussed in the present study as functions of the NT. The biaxial strain and stress are also strongly affected by the non-uniformity of the SiNx buffer layer thickness. Published by Elsevier Ltd.
Open Access
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
(American Institute of Physics, 2007) Lişesivdin, S. B.; Yıldız, A.; Kasap, M.; Özbay, Ekmel
The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.
Open Access
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
(Institute of Physics Publishing Ltd., 2016) Çakan, A.; Sevik, C.; Bulutay, C.
The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.
Open Access
A theoretical study of strained monolayer transition metal dichalcogenides based on simple band structures
(2019-10) Aas, Shahnaz
This doctoral thesis deals with optoelectronic and geometric band properties of two-dimensional transition metal dichalcogenides (TMDs) under applied strain. First, we analyze various types of strain for the K valley optical characteristics of a freestanding monolayer MoS2, MoSe2, WS2 and WSe2 within a two-band k p method. By this simple bandstructure combined with excitons at a variational level, we reproduce wide range of available strained-sample photoluminescence data. According to this model strain affects optoelectronic properties. Shear strain only causes a rigid wavevector shift of the valley without any alternation in the bandgap or the effective masses. Also, for exible substrates under applying stress the presence of Poisson's effect or the lack of it are investigated individually for the reported measurements. Furthermore, we show that circular polarization selectivity decreases/increases by tensile/compressive strain for energies above the direct transition onset. TMDs in addition to their different other attractive properties have rendered the geometric band effects directly accessible. The tailoring and enhancement of these features by strain is an ongoing endeavor. In the second part of this thesis, we consider spinless two and three band, and spinful four band bandstructure techniques appropriate to evaluate circular dichroism, Berry curvature and orbital magnetic moment of strained TMDs. First, we establish a new k p parameter set for MoS2, MoSe2, WS2 and WSe2 based on recently released ab initio and experimental band properties. For most of these TMDs its validity range extend from K valley edge to several hundreds of millielectron volts for both valence and conduction band. We introduce strain to an available three band tight-binding Hamiltonian to extend this over a larger part of the Brillouin zone. Based on these we report that by applying a 2:5% biaxial tensile strain, both the Berry curvature and the orbital magnetic moment can be doubled compared to their unstrained values. These simple bandstructure tools can be suitable for the device modeling of the geometric band effects in strained monolayer TMDs.
Open Access
Wireless monitoring of a structural beam to be used for post-earthquake damage assessment
(IEEE, 2018-05-06) Özbey, B.; Kurc, O.; Demir, Hilmi Volkan; Ertürk, Vakur B.; Altıntaş, Ayhan
Wireless monitoring of a standard reinforced concrete beam is shown in a simply supported beam experiment. The passive nested split-ring resonator (NSRR) probes are attached on the reinforcing bars (rebars) within the beam, and an antenna interrogates the probes from outside the beam. The results of the experiment show that the plastic deformation region strain/displacement can be detected by the wireless sensing system. The data collected by the system constitutes an important input for the assessment of the damage that can be observed after earthquakes.