High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration

Date
2009
Advisor
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Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Electronic ISSN
1558-0563
Publisher
Institute of Electrical and Electronics Engineers
Volume
30
Issue
11
Pages
1161 - 1163
Language
English
Type
Article
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Abstract

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.

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Keywords
Germanium, Photodiode, Selective, Strain, Tensile
Citation
Published Version (Please cite this version)