Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures

Date

2007

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
3
views
32
downloads

Citation Stats

Series

Abstract

The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.

Source Title

AIP Conference Proceedings

Publisher

American Institute of Physics

Course

Other identifiers

Book Title

Degree Discipline

Degree Level

Degree Name

Citation

Published Version (Please cite this version)

Language

English