Publication:
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures

Files

Strain_calculations_from_hall_measurements_in_undoped.pdf (174.3 KB)

Date

2007

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Research Projects

Organizational Units

Journal Issue

Abstract

The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.

Description

Date of Conference: 22-26 August 2006
Conference Name: 6th International Conference of the Balkan Physical Union, 2006

Keywords

2DEG, AlGaN/GaN, HEMT, QMSA, Strain

Citation

Permalink

http://hdl.handle.net/11693/27100

Collections

Scholarly Publications - Physics
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM