Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures

Date
2007
Advisor
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Source Title
AIP Conference Proceedings
Print ISSN
0094-243X
Electronic ISSN
Publisher
American Institute of Physics
Volume
899
Issue
Pages
623
Language
English
Type
Conference Paper
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Abstract

The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.

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Keywords
2DEG, AlGaN/GaN, HEMT, QMSA, Strain
Citation
Published Version (Please cite this version)