Browsing by Subject "Responsivity"
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Item Open Access AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain(2008) Tut, Turgut; Gökkavas, Mutlu; Özbay, EkmelWe report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.Item Open Access Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors(AIP, 2012) Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, AtillaTaking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λ cut-off ∼ 5.1 m). Al 2O 3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 10 13 Jones, respectively at 4μm and 77 K. Quantum efficiency (QE) was determined as 41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. © 2012 American Institute of Physics.Item Open Access Au/TiO2 nanorod-based Schottky-type UV photodetectors(Wiley, 2012-10-12) Karaagac, H.; Aygun, L. E.; Parlak, M.; Ghaffari, M.; Bıyıklı, Necmi; Okyay, Ali KemalTiO2 nanorods (NRs) were synthesized on fluorine-doped tin oxide (FTO) pre-coated glass substrates using hydrothermal growth technique. Scanning electron microscopy studies have revealed the formation of vertically-aligned TiO2 NRs with length of similar to 2 mu m and diameter of 110128 nm, homogenously distributed over the substrate surface. 130 nm thick Au contacts using thermal evaporation were deposited on the n-type TiO2 NRs at room temperature for the fabrication of NR-based Schottky-type UV photodetectors. The fabricated Schottky devices functioned as highly sensitive UV photodetectors with a peak responsivity of 134.8 A/W (lambda = 350 nm) measured under 3 V reverse bias. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimItem Open Access Investigation of bias current and modulation frequency dependences of detectivity of YBCO TES and the effects of coating of Cu-C composite absorber layer(2009) Moftakharzadeh, A.; Kokabi, A.; Bozbey, A.; Ghodselahi, T.; Vesaghi, M.A.; Khorasani, S.; Banzet, M.; Schubert J.; Fardmanesh, M.Bolometric response and noise characteristics of YBCO superconductor transition edge IR detectors with relatively sharp transition and its resulting detectivity are investigated both theoretically and experimentally. The magnitude of response of a fabricated device was obtained for different bias currents and modulation frequencies. Using the measured and calculated bolometric response and noise characteristics, we found and analyzed the device detectivity versus frequency for different bias currents. The detectivity versus chopping frequency of the device did not decrease following the response strongly, due to the decrease of the noise at higher frequencies up to 1 kHz, resulting in maximum detectivity around the modulation frequency of 100 Hz. We also improved the responsivity of the device through the increase of the surface absorption by using a novel infrared absorber, which is made of a copper-carbon composite, coated in a low-temperature process. Within the modulation frequency range studied in this paper, comparison of device detectivity before and after coating is also presented. © 2009 IEEE.Item Open Access Plasmonically enhanced ZnO thin-film-photo-transistor with dynamic responsivity control(IEEE, 2013) Özcan, Ayşe; Battal, Enes; Atar, Fatih Bilge; Okyay, Ali KemalWe fabricated an ZnO based thin-film photo-transistor with electrically tunable photo-responsivity operating in the UV and visible spectra and designed plasmonic structures enhancing the device performance up to 6 folds below the band-gap of ZnO. © 2013 IEEE.Item Open Access Silicon-Germanium multi-quantum well photodetectors in the near infrared(Optical Society of American (OSA), 2012) Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali KemalSingle crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.Item Open Access Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors(IOP Institute of Physics Publishing, 2012) Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Aydınlı, AtillaWe report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77K under 100mV bias. The zero bias responsivity and detectivity were 1.04AW 1 and 2.15 × 10 13 Jones, respectively, at 4μm and 77K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm.