Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors
Date
2012
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Source Title
Journal of Physics D : Applied Physics
Print ISSN
0022-3727
Electronic ISSN
1361-6463
Publisher
IOP Institute of Physics Publishing
Volume
45
Issue
36
Pages
365102-1 - 365102-5
Language
English
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Journal Title
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Volume Title
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Abstract
We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a self-assembling, long molecular chain headed with a sulfur atom. Photodiodes coated with and without the self-assembled monolayer (SAM) ODT were compared for their electrical and optical performances. For ODT-coated diodes, the dark current density was improved by two orders of magnitude at 77K under 100mV bias. The zero bias responsivity and detectivity were 1.04AW 1 and 2.15 × 10 13 Jones, respectively, at 4μm and 77K. The quantum efficiency was determined to be 37% for a cutoff wavelength of 5.1μm.
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Keywords
Ageing effects, Cutoff wavelengths, Detectivity, InAs/GaSb, InAs/GaSb superlattices, Molecular chains, Octadecanethiol, Optical performance, Orders of magnitude, Responsivity, Self-assembling, Sulfur atoms, Zero bias, Diodes, Indium antimonides, Photodetectors, Self assembled monolayers, Sulfur, Sulfur compounds, Organic polymers