Browsing by Subject "Quantum well lasers"

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    Förster-type nonradiative energy transfer directed from colloidal quantum dots to epitaxial quantum wells for light harvesting applications
    (Optical Society of America, 2011) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi Volkan
    We report on Frster-type nonradiative energy transfer directed from CdSe/ZnS core/shell quantum dots to InGaN/GaN quantum wells with 69.6% efficiency at 1.527 ns-1 rate at room temperature for potential light harvesting and solar cells applications. © 2011 OSA.
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    Low-threshold optical gain and lasing of colloidal nanoplatelets
    (IEEE, 2014-10) Keleştemur, Yusuf; Güzeltürk, Burak; Olutaş, Murat; Delikanlı, Savaş; Demir, Hilmi Volkan
    Semiconductor nanocrystals, which are also known as colloidal quantum dots (CQDs), are highly attractive materials for high performance optoelectronic device applications such as lasers. With their size, shape and composition tunable electronic structure and optical properties, CQDs are highly desired for achieving full-color, temperature-insensitive, low-threshold and solution-processed lasers [1, 2]. However, due to their small size, they suffer from the nonradiative multiexciton Auger Recombination (AR), where energy of a bound electron-hole pair is transferred to a third particle of either an electron or a hole instead of radiative recombination. Therefore, CQDs having suppressed AR are strongly required for achieving high quality CQD-based lasers. To address this issue, CQDs having different size, shape and electronic structure have been synthesized and studied extensively [3-5]. Generally, suppression of AR and lower optical gain thresholds are achieved via reducing the wavefunction overlap of the electron and hole in a CQD. However, the separation of the electron and hole wavefunctions will dramatically decrease the oscillator strength and optical gain coefficient, which is highly critical for achieving high performance lasers. Therefore, colloidal materials with suppressed AR and high gain coefficients are highly welcomed. Here, we study optical gain performance of colloidal quantum wells [6] of CdSe-core and CdSe/CdS core/crown nanoplatelets (NPLs) that demonstrate remarkable optical properties with ultra-low threshold one- and two-photon optical pumping. As a result of their giant oscillator strength, superior optical gain and lasing performance are achieved from these colloidal NPLs with greatly enhanced gain coefficient [7]. © 2014 IEEE.
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    Quantum entanglement of spin-1 bosons with coupled ground states in optical lattices
    (IOP Institute of Physics Publishing, 2009) Öztop, B.; Oktel, M. Ö.; Müstecapliolu, Ö. E.; You, L.
    We examine particle entanglement, characterized by pseudo-spin squeezing, of spin-1 bosonic atoms with coupled ground states in a one-dimensional optical lattice. Both the superfluid and Mott-insulator phases are investigated separately for ferromagnetic and antiferromagnetic interactions. Mode entanglement is also discussed in the Mott-insulating phase. The role of a small but nonzero angle between the polarization vectors of counter-propagating lasers forming the optical lattice on quantum correlations is investigated as well.
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    Super-radiant surface emission from a quasi-cavity hot electron light emitter
    (Springer New York LLC, 1999) O'Brien, A.; Balkan, N.; Boland-Thoms, A.; Adams, M.; Bek, A.; Serpengüzel, A.; Aydınlı, A.; Roberts, J.
    The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1 - xAlxAs p-n junction incorporating a single GaAs quantum well on the n-side of the junction plane. Non-equilibrium electrons are injected into the quantum well via tunnelling from the n-layer. In order to preserve the charge neutrality in the depletion region, the junction undergoes a self-induced internal biasing. As a result the built-in potential on the p-side is reduced and hence the injection of non-equilibrium holes into the quantum well in the active region is enhanced. The work presented here shows that a distributed Bragg reflector grown below the active region of the HELLISH device increases the emitted light intensity by two orders of magnitude and reduces the emission line-width by about a factor of 3 in comparison with the original HELLISH-1 structure. Therefore, the device can be operated as an ultrabright emitter with higher spectral purity.
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    White light generating nonradiative energy transfer directly from epitaxial quantum wells to colloidal nanocrystal quantum dots
    (Optical Society of America, 2009) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi Volkan
    We present white light generating nonradiative Förster resonance energy transfer at a rate of (2ns)-1 directly from epitaxial InGaN/GaN quantum wells to CdSe/ZnS heteronanocrystals in their close proximity at chromaticity-coordinates (x,y)=(0.42,0.39) and correlated-color-temperature CCT=3135K. ©2009 Optical Society of America.