Browsing by Subject "Photoelectrons"
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Item Open Access Electrical properties from photoinduced charging on Cd-doped (100) surfaces of CuInSe2 epitaxial thin films(AVS Science and Technology Society, 2016) Johnson, N.; Aydogan, P.; Süzer, Şefik; Rockett, A.The photoresponse of Cd-doped CuInSe2 (CIS) epitaxial thin films on GaAs(100) was studied using x-ray photoelectron spectroscopy under illumination from a 532 nm laser between sample temperatures of 28-260 °C. The initial, air-exposed surface shows little to no photoresponse in the photoelectron binding energies, the Auger electron kinetic energies or peak shapes. Heating between 50 and 130 °C in the analysis chamber results in enhanced n-type doping at the surface and an increased light-induced binding energy shift, the magnitude of which persists when the samples are cooled to room temperature from 130 °C but which disappears when cooling from 260 °C. Extra negative charge trapped on the Cu and Se atoms indicates deep trap states that dissociate after cooling from 260 °C. Analysis of the Cd modified Auger parameter under illumination gives experimental verification of electron charging on Cd atoms thought to be shallow donors in CIS. The electron charging under illumination disappears at 130 °C but occurs again when the sample is cooled to room temperature.Item Open Access Low-temperature grown wurtzite InxGa1−xN thin films via hollow cathode plasma-assisted atomic layer deposition(Royal Society of Chemistry, 2015-08) Haider A.; Kizir S.; Ozgit Akgun, C.; Goldenberg, E.; Leghari, S. A.; Okyay, Ali Kemal; Bıyıklı, NecmiHerein, we report on atomic layer deposition of ternary InxGa1−xN alloys with different indium contents using a remotely integrated hollow cathode plasma source. Depositions were carried out at 200 °C using organometallic Ga and In precursors along with N2/H2 and N2 plasma, respectively. The effect of In content on structural, optical, and morphological properties of InxGa1−xN thin films was investigated. Grazing incidence X-ray diffraction showed that all InxGa1−xN thin films were polycrystalline with a hexagonal wurtzite structure. X-ray photoelectron spectroscopy depicted the peaks of In, Ga, and N in bulk of the film and revealed the presence of relatively low impurity contents. In contents of different InxGa1−xN thin films were determined by energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Transmission electron microscopy also confirmed the polycrystalline structure of InxGa1−xN thin films, and elemental mapping further revealed the uniform distribution of In and Ga within the bulk of InxGa1−xN films. Higher In concentrations resulted in an increase of refractive indices of ternary alloys from 2.28 to 2.42 at a wavelength of 650 nm. The optical band edge of InxGa1−xN films red-shifted with increasing In content, confirming the tunability of the band edge with alloy composition. Photoluminescence measurements exhibited broad spectral features with an In concentration dependent wavelength shift and atomic force microscopy revealed low surface roughness of InxGa1−xN films with a slight increase proportional to In content.Item Open Access Modeling photoelectron spectra of conjugated oligomers with time-dependent density functional theory(American Chemical Society, 2010) Salzner, U.With the aim of producing accurate band structures of conjugated systems by employing the states of cations, TDDFT calculations on conjugated oligomer radical cations of thiophene, furan, and pyrrole with one to eight rings were carried out. Benchmarking of density functional theory and ab initio methods on the thiophene monomer shows that the ΔSCF ionization potential (IP) is most accurate at the B3LYP/6-311G* level. Improvement of the basis set beyond 6-311G* leads to no further changes. The IP is closer to experiment at B3LYP/6-311G* than at CCSD(T)/CCPVQZ. For longer oligomers the ΔSCF IPs decrease too fast with increasing chain length with all density functionals. CCSD/6-311G* performs well if the geometries are optimized at the CCSD level. With MP2 geometries IPs decrease too fast. Peak positions in photoelectron spectra were determined by adding appropriate TDDFT excitation energies of radical cations to the ΔSCF IPs. The agreement with experiment and with Green function calculations shows that TDDFT excited states of radical cations at the B3LYP/6-311G* level are very accurate and that absorption energies can be employed to predict photoelectron spectra.Item Open Access Preparation of Al 2O 3and AlN nanotubes by atomic layer deposition(Cambridge University Press, 2012) Ozgit-Akgun, Çagla; Kayacı, Fatma; Dönmez, İnci; Çağatay, Engin; Uyar, Tamer; Bıyıklı, NecmiAl 2O 3 and AlN nanotubes were fabricated by depositing conformal thin films via atomic layer deposition (ALD) on electrospun nylon 66 (PA66) nanofiber templates. Depositions were carried out at 200°C, using trimethylaluminum (TMAl), water (H 2O), and ammonia (NH 3) as the aluminum, oxygen, and nitrogen precursors, respectively. Deposition rates of Al 2O 3 and AlN at this temperature were ∼1.05 and 0.86 Å/cycle. After the depositions, Al 2O 3- and AlN-coated nanofibers were calcinated at 500°C for 2 h in order to remove organic components. Nanotubes were characterized by using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). AlN nanotubes were polycrystalline as determined by high resolution TEM (HR-TEM) and selected area electron diffraction (SAED). TEM images of all the samples reported in this study indicated uniform wall thicknesses. © 2012 Materials Research Society.Item Open Access SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers(World Scientific Publishing, 2009) Ağan, S.; Aydınlı, AtillaWe have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 °C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confinn presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal fonnation in multi layers was investigated by Raman spectroscopy and TEM.Item Open Access Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C-and Si-faces of SiC(American Institute of Physics Inc., 2015) Aydogan, P.; Arslan, E.; Cakmakyapan, S.; Özbay, Ekmel; Strupinski, W.; Süzer, ŞefikWe report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphene layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.Item Open Access X-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devices(AIP Publishing, 2016) Aydogan, P.; Polat, E. O.; Kocabas, C.; Süzer, ŞefikThe progress in the development of graphene devices is promising, and they are now considered as an option for the current Si-based electronics. However, the structural defects in graphene may strongly influence the local electronic and mechanical characteristics. Although there are well-established analytical characterization methods to analyze the chemical and physical parameters of this material, they remain incapable of fully understanding of the morphological disorders. In this study, x-ray photoelectron spectroscopy (XPS) with an external voltage bias across the sample is used for the characterization of morphological defects in large area of a few layers graphene in a chemically specific fashion. For the XPS measurements, an external +6 V bias applied between the two electrodes and areal analysis for three different elements, C1s, O1s, and Au4f, were performed. By monitoring the variations of the binding energy, the authors extract the voltage variations in the graphene layer which reveal information about the structural defects, cracks, impurities, and oxidation levels in graphene layer which are created purposely or not. Raman spectroscopy was also utilized to confirm some of the findings. This methodology the authors offer is simple but provides promising chemically specific electrical and morphological information.Item Open Access XPS characterization of Au (core)/SiO2 (shell) nanoparticles(American Chemical Society, 2005) Tunc, I.; Süzer, Şefik; Correa-Duarte, M. A.; Liz-Marzán, L. M.Core-shell nanoparticles with ca. 15-nm gold core and 6-nm silica shell were prepared and characterized by XPS. The Au/Si atomic ratio determined by XPS is independent of the electron takeoff angle because of the concentric spherical shape of the nanoparticles. The formula given by Wertheim and DiCenzo (Phys. Rev. B 1988, 37, 844) for spherical nanoparticles and the modified one by Yang et al. (J. Appl. Phys. 2005, 97, 024303) for core-shell nanoparticles are used to correlate the XPS-derived composition with the geometry of the nanoparticles only after significantly modifying either the bulk density of the silica shell or the attenuation length of the photoelectrons. © 2005 American Chemical Society.