Browsing by Subject "P-i-n photodetectors"

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    N-structure based on InAs/AlSb/GaSb superlattice photodetectors
    (Academic Press, 2015) Hostut, M.; Alyoruk, M.; Tansel, T.; Kilic, A.; Turan, R.; Aydınlı, Atilla; Ergun, Y.
    We have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and R0A product at 125 K were obtained as 1.8 × 10-6 A cm-2 and 800ωcm2 at zero bias, respectively. The specific detectivity was measured as 3 × 1012 Jones with cut-off wavelengths of 4.3 μm at 79 K reaching to 2 × 109 Jones and 4.5 μm at 255 K. ©2014 Elsevier Ltd. All rights reserved.
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    Silicon-Germanium multi-quantum well photodetectors in the near infrared
    (Optical Society of American (OSA), 2012) Onaran, E.; Onbasli, M. C.; Yesilyurt, A.; Yu, H. Y.; Nayfeh, A. M.; Okyay, Ali Kemal
    Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.