Browsing by Subject "Low noise amplifier"
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Item Open Access AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier(Wiley, 2005-04) Schwindt, R.; Kumar, V.; Aktas, O.; Lee, J. W.; Adesida, I.A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The dc characteristics of individual 0.25-μm × 150-μm transistors were: maximum current density of 1.0 A/mm, maximum transconductance of 170 mS/mm and a threshold voltage of -6.8 V. The devices have a typical short circuit current gain cutoff frequency of 24.5 GHz and a maximum oscillating frequency of 48 GHz. The devices demonstrated a minimum noise figure of 1.6 dB with an associated gain of 10.6 dB at 10 GHz.Item Open Access GaN-based single stage low noise amplifier for X-band applications(IEEE, 2022-07-18) Çağlar, Gizem Tendürüs; Aras, Yunus Erdem; Urfalı, Emirhan; Yılmaz, Doğan; Özbay, Ekmel; Nazlıbilek, SedatSource degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.Item Open Access S-band GaN based low noise MMIC amplifier design and characterization(Bilkent University, 2019-02) Taşcı, MuhittinLow Noise Amplifiers (LNA) are widely preferred components in receiver frontend modules. The received signal level is generally very low and amplifying it without adding too much noise is very crucial in communication systems. In this thesis study design, fabrication and test of three Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Circuit (MMIC) LNAs are presented. Inductive source feedback topology is used to obtain both better input return loss and noise figure. All three designs achieve higher than 20 dB gain, better than 10 dB input return loss and their noise figure values are 2 dB, 1.5 dB and 1 dB in S-band. High resistive gate biasing is utilized at third design to increase input power handling. Size reduction is very important in MMIC technology. The first design is 3 x 5 mm and the second design is 2 x 3.5 mm, % 46 size reduction is achieved. In GaN technology controlling SiN layer thickness is very problematic and this fabrication step affects capacitor values. The second and third LNA designs presented in this research, matching circuitries and implicitly overall characteristics are not in uenced too much by a change of capacitor values. Targeted bandwidth is 2.7-3.5 GHz, achieved frequency range is 1.5 GHz (from 2.5 GHz to 4 GHz). The three LNA designs have 28.1 dBm, 33.4 dBm, and 35.9 dBm output third-order intercept point respectively. Output powers at 1-dB compression points are 18.2 dBm, 23.4 dBm and 25.9 dBm. For all three LNA designs, group delay is less than 0.3 nanoseconds.Item Open Access An S-Band high gain AlGaN/GaN HEMT MMIC low noise amplifier(IEEE, 2019) Muhittin, Tasçı; Şen, Ö.; Özbay, EkmelIn this paper design, fabrication and measurement of a GaN HEMT based Monolithic Microwave Integrated Circuit (MMIC) Low Noise Amplifier (LNA) is presented. 12-Term equivalent circuit modeling is exacuted. Inductive source feedback topology is used to obtain low Noise Figure (NF) with appropriate input return loss. The gain of this design is higher than 25 dB, input return loss is better than 13 dB and NF value is 1.6 dB in S band. This work is only 3 x 5 mm. LNA has 28.1 dBm output third-order intercept point. Output power at 1-dB compression point is 18.2 dBm. Group delay is less than 0.3 nanoseconds. Due to superior properties of GaN technology, without NF performance degradation GaN LNA enables to high input power handling (P in is 20 dBm, CW, 10 mins).Item Open Access X-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technology(IEEE, 2022-07-18) Nawaz, Muhammad Imran; Aras, Yunus Erdem; Zafar, Salahuddin; Akoğlu, Büşra Çankaya; Tendürüs, Gizem; Özbay, EkmelCascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT technology in the frequency range of 8 – 12 GHz. Cascode HEMT with inductive source degeneration is utilized. All the design work is done using PathWave Advanced Design System. The LNA provides 9.5 to 10.6 dB with input return loss better than 10 dB and output return loss better than 8 dB in the whole band. The noise figure of the amplifier is below 1.9 dB. The linearity parameters P1dB and OIP3 are greater than equal to 16 dBm and 28 dBm respectively within operating bandwidth. The noise figure of the amplifier is fairly constant over 30 mA to 60 mA bias currents and 9 V – 18 V operating bias voltage. This is a unique finding which is being reported for the first time to the best of authors' knowledge.