GaN-based single stage low noise amplifier for X-band applications

Date

2022-07-18

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Source Title

Microwave Mediterranean Symposium (MMS)

Print ISSN

2157-9822

Electronic ISSN

2157-9830

Publisher

IEEE

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[1] - [4]

Language

English

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Abstract

Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 GHz by using HEMTs with source degeneration in 0.15 µm GaN on SiC technology. All design work is done in the Advanced Design System. The LNA delivers more than 6.9 dB gain with better than 8.5 dB and 9.5 dB input and output return losses, respectively. In addition, the gain ripple is around 2.7 dB. The noise figure of the amplifier is achieved below 1.1 dB with P1dB of 17.2 dBm and %12.7 drain efficiency within the operating bandwidth at the bias conditions of 9 V /20 mA.

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