Browsing by Subject "Low impurity concentrations"

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    Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
    (IEEE, 2015) Bıyıklı, Necmi; Ozgit-Akgun, Çağla; Goldenberg, Eda; Haider, Ali; Kızır, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali Kemal
    Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.
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    Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
    (Wiley - V C H Verlag GmbH & Co. KGaA, 2015) Ozgit Akgun, C.; Goldenberg, E.; Bolat, S.; Tekcan, B.; Kayaci, F.; Uyar, Tamer; Okyay, Ali Kemal; Bıyıklı, Necmi
    Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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    Plasma-enhanced atomic layer deposition of III-nitride thin films
    (Electrochemical Society Inc., 2013) Ozgit-Akgun, Çağla; Dönmez İnci; Bıyıklı, Necmi
    AlN and GaN thin films were deposited by plasma-enhanced atomic layer deposition using trimethylmetal precursors. The films were found to have high oxygen incorporation, which was attributed to oxygen contamination related to the plasma system. The choice of nitrogen containing plasma gas (N2, N2/H2 or NH3) determined the severity of oxygen incorporation into deposited films. Lowest oxygen concentrations were attained for AlN and GaN thin films using NH3 and N2 plasma, respectively. Initial experiments have shown that GaN thin films with low impurity concentrations can be deposited when plasma-related oxygen contamination is avoided by the use of an alternative plasma source. © The Electrochemical Society.