Browsing by Subject "Forward bias voltage"

Now showing 1 - 2 of 2

Open Access
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015) Turut, A.; Karabulut, A.; Ejderha, K.; Bıyıklı, Necmi
We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.
Open Access
Current-Transport mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures
(Elsevier, 2013) Arslan, E.; Turan, S.; Gökden, S.; Teke, A.; Özbay, Ekmel
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.